Optical device, electronic equipment, and method of producing same

Abstract

An optical device (10A) is provided with a semiconductor element (11), a light-receiving part (12) provided on the main surface of the semiconductor element (11), and a translucent sheet (15) stacked on the main surface of the semiconductor element (11) via a bonding member (20). Further, a saw-toothed textured section (16) is formed on at least one of either the surface of the transparent sheet (15) that faces the semiconductor element (11), or the rear surface of the same.

Description

technical field [0001] The present invention relates to optical devices for detecting light and methods of manufacturing the same. Background technique [0002] In recent years, with the development of miniaturization, thinning, weight reduction and high performance of electronic equipment, semiconductor devices have changed from conventional package structures, and bare chip or CSP (Chip Scale Package) structures have become mainstream. Among them, wafer-level CSP technology that enables electrical connection through formation of through-electrodes and rewiring in a wafer state assembly process has attracted attention. For example, this technique is gradually adopted in optical devices typified by solid-state imaging devices (for example, refer to Patent Document 1). [0003] Figure 4 It is a diagram schematically showing a cross-section of a conventional solid-state imaging device 100A having a wafer-level CSP structure. [0004] A conventional solid-state imaging devic...

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Problems solved by technology

[0016] However, in the above-described solid-state imaging device 100A, there is a problem that, among the light rays incident on the light-transmitting plate 106, only the light rays incident on the area corresponding to the imaging element 102 (hereinafter referred to as "imaging area") reach the imaging element. 102, and the light incident on the area outside the imaging area (hereinafter referred to as "peripheral area") does not reach the imaging element 102

That is, since the amount of light received by the imaging element 102 is small relative to the amount of light incident on the light-transmitting plate 106, the light-receiving sensitivity of the imaging element 102 becomes low.

[0017] In addition, since the light incident on the peripheral area is also irradiated on the adhesive member 105, the problem of light resistance that degrades the adhesive member 105 occurs depending on the wavelength of the light.

[0018] In addition, there is a problem that image characteristics are degraded by light reflected from the side surface of the light-transmitting plate 106, the surface of the semiconductor element 101 corresponding to the peripheral region, and the surface of the adhesive member 105. The distance between the sides of the plate 106 is designed to be wider to some extent

In addition, it is necessary to make the imaging area narrower, or to make the solid-state imaging device 100A larger (to make the semiconductor element 101 larger, or to make the light-transmitting plate 106 larger than the imaging element 102).

[0019] However, if the imaging area is narrowed, the number of effective pixels decreases and sharp images cannot be obtained

Alternatively, the light-receiving sensitivity is reduced by reducing the size of the microlens 103

On the other hand, when the solid-state imaging device 100A is made larger, there is a problem that the area of ​​the solid-state imaging device 100A becomes larger.

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