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Strained sigesn fin photodetector

A photodetector, fin-type technology, applied in circuits, electrical components, semiconductor devices, etc., can solve problems such as deterioration of material quality and thermal stability, difficulty in preparing high-quality GeSn, and difficulty in wide-ranging band gap adjustment. To achieve the effect of low material, low cost, and improved adjustment effect

Active Publication Date: 2017-06-16
XIDIAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In theory, increasing the composition of Sn can reduce the band gap of GeSn material to zero, but because the solid solubility of Sn in Ge is very low, that is, less than 1%, it is difficult to prepare high-quality, defect-free high GeSn of Sn composition
At present, the method of epitaxial growth can only prepare GeSn materials with a Sn composition of 20%.
And with the increase of Sn composition, the material quality and thermal stability will deteriorate, so it is difficult to adjust the band gap in a wide range by simply increasing the composition of Sn

Method used

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  • Strained sigesn fin photodetector

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] Embodiment 1, the strained SiGeSn fin photodetector of double-layer structure absorption region, single-layer structure stress layer

[0025] refer to figure 1 , this example includes from bottom to top: a lower electrode 102 , an absorption region 103 and an upper electrode 104 . The lower electrode 102 is made of a relaxed n-type Ge material, the upper electrode 104 is made of a relaxed p-type Ge material, and the absorption region 103 is made of a double-layer relaxed intrinsic SiGeSn composite material, which is arranged alternately with the gaps to form a fin structure; The upper electrode 104 is located on the upper surface of the absorption region 103 and has the same shape as the fin shape of the absorption region 103 . The surface of the upper electrode 104 and part of the sides of the absorption region 103 are wrapped with a single layer of Si 3 N 4 stress film 105, such as image 3 shown. Stress is generated in the absorption region 103 through the stres...

Embodiment 2

[0027] Example 2, a strained SiGeSn fin photodetector with a single-layer structure absorption region and a double-layer structure stress layer.

[0028] refer to figure 2 , this example includes from bottom to top: a lower electrode 102 , an absorption region 103 , an upper electrode 104 and a double-layer stress film 105 . The lower electrode 102 is made of a relaxed n-type Si material; the absorption region 103 is located on the lower electrode 102, and the absorption region 103 is made of a single-layer relaxed intrinsic SiGeSn composite material, and is arranged alternately with the gaps to form a fin structure; The upper electrode 104 is made of a relaxed p-type Si material, located on the upper surface of the absorption region 103, and its shape is the same as the fin shape of the absorption region 103; the double-layer stress film 105 completely wraps the sides of the upper electrode 104 and the absorption region 103, so that Stress is generated in the absorption reg...

Embodiment 3

[0031] Embodiment 3, single-layer structure absorption region, strained SiGeSn fin photodetector of single-layer structure stress layer

[0032] refer to figure 1 , this example includes from bottom to top: a lower electrode 102 , an absorption region 103 and an upper electrode 104 . The lower electrode 102 is made of relaxed n-type polysilicon material, the upper electrode 104 is made of relaxed p-type polysilicon material, and the absorption region 103 is made of a single-layer relaxed intrinsic SiGeSn composite material, which is arranged alternately with the gaps to form a fin structure; The shape of the upper electrode 104 is the same as the fin shape of the absorption region 103 . The surface of the upper electrode 104 and part of the sides of the absorption region 103 are wrapped with a single-layer stress film 105, such as image 3 shown. The stress film generates stress in the absorption region 103 to realize band gap adjustment of the absorption region 103 and inc...

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Abstract

The invention discloses a strain SiGeSn fin-shaped photoelectric detector, and mainly solves the problem that materials of conventional photoelectric detectors are high in toxicity and cost. The photoelectric detector comprises a lower electrode (102), absorbing zones (103), upper electrodes (104) and stress thin films (105) from bottom to up, wherein the absorbing zones (103) has a fin-shaped structure formed by intersection between interspaces and an SiGeSn composite material; the SiGeSn composite material is obtained by extending different components of Ge and Sn on a substrate (101); the general formula of the SiGeSn composite material is Si1-x-yGeySnx; 0 is less than or equal to x; x is less than or equal to 0.25; 0 is less than or equal to y; y is less than or equal to 0.75; the stress thin films (105) wrap the side surfaces of the absorbing zones (103) and the surfaces of the upper electrodes (104). The photoelectric detector changes band interspace of the absorbing zones (103) through the strain generated in the SiGeSn composite material of the stress thin films (105), and improves spectral response range of the detector.

Description

technical field [0001] The invention belongs to the technical field of microelectronic devices, in particular to a photodetector, in particular to a strained SiGeSn fin photodetector, which can be used for photoelectric detection. Background technique [0002] The infrared band contains many characteristic spectral lines. Detectors working in this band have important applications in many aspects such as communication technology, military, national defense, fire protection, medical treatment, environmental monitoring, and automatic imaging. At present, the semiconductor materials used for infrared detectors include III-V group materials InGaAs, GaInAsSb, InGaSb, etc., II-VI materials HgCdTe and IV group materials Ge, GeSn, etc. InGaAs detectors have excellent performance in the near-infrared band, Hg x CD 1-x The Te long-wavelength infrared detector is currently the best mid-infrared detector, and the band gap can be continuously adjusted from 0-0.8eV by adjusting the Hg co...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/028H01L31/0352H01L31/101
CPCH01L31/02161H01L31/028H01L31/035281H01L31/101
Inventor 韩根全张春福郝跃张进城唐诗
Owner XIDIAN UNIV
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