Target material for anti-electromagnetic wave interference alloy thin film

An alloy film, anti-electromagnetic wave technology, applied in the field of sputtering targets, can solve the problems of complex manufacturing process, increase the complexity of control equipment, etc., and achieve the effect of simplifying sputtering control control

Inactive Publication Date: 2015-03-25
MEGA ENERGY VACUUM
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] The manufacturing process of the above-mentioned mosaic composite target is complex, and the plasma has to be guided to bombard the target area, so the complexity of the control equipment is increased

Method used

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  • Target material for anti-electromagnetic wave interference alloy thin film
  • Target material for anti-electromagnetic wave interference alloy thin film

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Embodiment Construction

[0031] In order to make the above objectives, features and advantages of the present invention more obvious and understandable, a preferred embodiment of the magnetron target material designed according to the present invention, together with the accompanying drawings, is described in detail as follows.

[0032] The main component of the target material of the present invention is zinc-aluminum alloy, and 0.005-1wt% of modifier is added during the process of smelting zinc-aluminum alloy. The modifier is selected from Zn, Al, Ti, C, B, N, Zr, Cr And any one of the groups formed by any combination thereof to achieve the purpose of improvement.

[0033] The preferred combination in the modifier is any of the following (i)-(viii)

[0034] (i) Al-Ti-C, weight percentage: Ti is 0.8-25wt%, C is 0.01-3wt%, and the rest is Al.

[0035] (ii) Al-Ti-B-C, weight percentage: Ti is 1-20wt%, boron carbide B 4 C is 0.1-7wt%, and the rest is Al.

[0036] (iii) Al-Ti-B-N, weight percentage: Ti is 1-20wt%...

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Abstract

The invention provides a target material for an anti-electromagnetic wave interference alloy thin film. The target material for the anti-electromagnetic wave interference alloy thin film smelts alloy main components to a target in the manner of smelting. The main alloy includes 59wt% to 97wt% of zinc, 3wt% to 40wt% of aluminum, and 0.005wt% to 1wt% of a modifier, wherein the modifier is selected from Zn, Al, Ti, C, B, N, Zr, Cr or a group composed of any combination.

Description

Technical field [0001] The present invention relates to a sputtering target, in particular to a target material resistant to electromagnetic wave interference alloy film. Background technique [0002] Although the texture of the plastic case is not as good as that of the metal case, it is relatively light and can be integrally molded by injection. In addition, the texture of the plastic case can be improved by plating a metal film, and the plastic case and the metal case CP Compared with the value, the plastic case is much cheaper. Therefore, in the known 3C products, the plastic case has always occupied a place. Especially when the market attributes of 3C products are classified as medium and low-end, the market share of plastic casings becomes higher. [0003] In addition to the above-mentioned texture that is not as good as the metal case, the plastic case needs to be improved by metal coating. Another disadvantage is that electromagnetic waves can penetrate the plastic case. T...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C22C18/04C22C1/06C23C14/14C23C14/34
Inventor 郑兆希
Owner MEGA ENERGY VACUUM
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