50results about How to "Increase sputtering rate" patented technology

Method for sputtering from a dielectric target (9) in a vacuum chamber (2) with a high frequency gas discharge, the target (9) being mounted on a cooled metallic back plate (10) and this back plate forming an electrode (10) supplied with high frequency, includes a target thickness (Td) profiled (15) differently over the surface such that in the regions of a desired decrease of the sputtering rate the target thickness (Td) is selected to be greater than in the remaining regions.

Certain example embodiments relate to a layer of or including Ti_1-xSi_xO_y and/or a method of making the same. In certain example embodiments, the Ti_1-xSi_xO_y-based layer may be substoichiometric with respect to oxygen. In certain example embodiments of this invention, the layer may include Ti_1-xSi_xO_y where x is from about 0.05 to 0.95 (more preferably from about 0.1 to 0.9, and even more preferably from about 0.2 to 0.8, and possibly from about 0.5 to 0.8) and y is from about 0.2 to 2 (more preferably from about 1 to 2, and even more preferably from about 1.5 to 2, and possibly from about 1.9 to 2). The layer may have an index of refraction of from about 1.6 to 1.9. The layer may also be used with a transparent conductive oxide in a transparent conductive coating.

The invention relates to a cathode device for carrying out linear reactive sputtering film coating by utilizing electric-field confinded plasmas, comprising a target stand, a working gas source, a reaction gas source and a first target material and a second target material which are oppositely arranged on the target stand and respectively extend along the longitudinal direction, wherein the two opposite side wall surfaces of the first target material and the second target material respectively concave inwards to form sputtering surfaces, and a target cavity is formed between the two sputtering surfaces; the working gas source and the reaction gas source are respectively arranged at the inlet side and the outlet side of the target cavity; and on the cross section of the cathode device, the minimum distance between the two sputtering surfaces is at the outlet position of the target cavity. In the invention, the distribution of electric fields is changed by changing the shape of the target material, and the direction of the strength of the electric field in the target cavity is along the direction being vertical to the sputtering surfaces, and therefore, the plasmas are intensively confined in the central areas of the pair of target materials, which increases the density of the target materials and further improves the sputtering rate. Meanwhile, the invention also can effectively prevent reaction gas from entering the target cavity, and thereby, target poisoning is avoided.

A piezoelectric actuator includes a substrate; a diaphragm overlying the substrate; a lower electrode overlying the diaphragm; a piezoelectric body overlying the lower electrode; an upper electrode that includes a first upper sub-electrode which overlies the piezoelectric body and which has a first sputtering rate and also includes a second upper sub-electrode which overlies the first upper sub-electrode, which has a second sputtering rate less than the first sputtering rate, and which is the uppermost layer; and a protective film extending over side surfaces of the piezoelectric body and the second upper sub-electrode, a portion of the protective film that overlies the second upper sub-electrode being removed by sputtering.

In the present invention a sub-stoichiometric ceramic ZnO_x:Al target, with 0.3<x<1, is used for depositing a ZnO:Al layer in a reactive sputtering process. The process is carried out in an Ar/O₂ atmosphere. The diagram depicts the deposition rate R depending on the oxygen flow in a sputtering process according to the present invention compared with a conventional sputter process using a stoichiometric ZnO target. The upper line x<1 indicates the deposition rate R when using the inventive target and process. The lower line x=1, for comparison only, indicates the deposition rate R when using a stoichiometric ceramic ZnO target. It can be seen from the diagram that both processes are quite stable as there are no steep slopes when varying the oxygen flow. However, the line x<1 is above the line x=1. Therefore, a working point P may be selected which has a higher deposition rate R than a corresponding working point P of a corresponding ceramic target. A higher deposition rate, however, entails a lower bombardment of the deposited layer with oxygen ions. Therefore, the quality of the ZnO:Al layer is improved as far as the conductivity and the etchability of the layer are concerned.

A workpiece is manufactured using a magnetron source that has an optimized yield of sputtered-off material as well as service life of the target. Good distribution values of the layer on the workpiece are obtained that are stable over the entire target service life, and a concave sputter face in a configuration with small target-to-workpiece distance is combined with a magnet system to form the magnetron electron trap in which the outer pole of the magnetron electron trap is stationary and an eccentrically disposed inner pole with a second outer pole part is rotatable about the central source axis.

A method of producing a titanium-suboxide-based coating material comprises the following steps: providing a titanium-suboxide base material; and treating the titanium-suboxide base material under oxidizing conditions for in-situ development of a finely dispersed titanium-dioxide component in the ceramic titanium-suboxide base material.

The present invention pertains to the construction of analytical instruments and may be used for analysing naturel or industrial waters, biological samples as well as geological samples. The method for detecting elements in solutions comprises pulverising the samples using pulses, ionising the pulverised atoms during Penning's collisions and recording the ions thus formed during a mass spectral analysis while carrying out a separation of the ion time-of-flight. The pulse pulverisation of the sample is carried out from a surface which is heated at a temperature of between 1000 and 1500% C. and on which the sample dried in a flow of ballast gas forms a dry residue. The ballast gas may consist of Kr, Xe or mixtures thereof wich Ar under a pressure of between 1 and 2 torrs. The device for detecting elements in solutions comprises an ionising device which is arranged in a gas-discharge chamber filled with an inert gas. The detection device further includes a time-of-flight mass spectrometer which comprises an ion sampling and focusing system as well as a reflective mass in the shape of a spectral analyser. The ionising device is made in the shape of a thin-wall, metallic, cylindrical and hollow cathode that comprises a dosing opening which is used for introducing the sample to be analysed and which is located on a same axis with a vacuum port.

In a process for coating a substrate, the substrate is arranged opposite a removal surface of a target and the coating material is atomized by sputtering under an inert or reactive-gas-containing process gas and deposited on the substrate. The coating takes place from a mixed target with at least one target component A and a target component B. At the beginning of the sputtering process, the distribution of the target components A and B in a superficial target layer of the removal surface is modified by high-power impulse magnetron sputtering.

A tantalum sputtering target, wherein, on a sputtering surface of the tantalum sputtering target, an orientation rate of a (200) plane exceeds 70%, an orientation rate of a (222) plane is 30% or less. By controlling the crystal orientation of the target, effects are yielded in that the discharge voltage of the tantalum sputtering target can be reduced so that plasma can be more easily generated, and the voltage drift during deposition can be suppressed.

An enhanced sputtering target is provided for use in a magnetron sputtering system. The sputtering target includes an active surface from which target material is sputtered and a back surface opposite the active surface. At least one magnet is embedded in the back surface of the target and is oriented to increase the magnetic field passing through the active surface of the target.

A deposition system includes a chamber, a plurality of targets in a center region in the chamber and a plurality of substrates in the chamber. The targets are sequentially positioned when viewed in a first direction. At least one of the targets includes a sputtering surface facing outward. The substrates are sequentially positioned when viewed in the first direction. At least one of the substrates includes a deposition surface configured to receive material sputtered off the sputtering surface.

An endblock for a rotatable sputtering target, such as a rotatable magnetron sputtering target, is provided. A sputtering apparatus, including one or more such endblock(s), includes locating the electrical contact(s) (e.g., brush(es)) between the collector and rotor in the endblock(s) in an area under vacuum (as opposed to in an area at atmospheric pressure).

The present invention provides an apparatus and method for enhancing the signal intensity of a radio frequency glow discharge mass spectrometer by using an adjustable magnetic field, to better solve the problem of low signal intensity of the existing radio frequency glow discharge mass spectrometer. The apparatus includes a sample introduction device which is provided with a sample introduction rod and on which samples are fixed; and an adjustable magnetic field enhancement portion which is provided with an outer casing and an electromagnet composed of an energizing solenoid and an iron core,the electromagnet is placed in the outer casing, and the adjustable magnetic field enhancement portion is fixed between the sample introduction rod of the sample introduction device and the samples.

The invention provides a sputtering device which restrains target injuries and improves sputtering rate. The sputtering device is provided with a vacuum chamber which is provided with a processing space inside, a sputtering gas supply portion which provides sputtering gas to the processing space, a first mechanism used to make the base material of a film forming object opposite to the processing space, a cylindrical rotating cathode which is arranged in the processing space and can rotate with a central axis as a center, the periphery of the rotating cathode being covered by a target material, a magnetic field forming portion which is arranged in the rotating cathode and forms a magnetic field near the part of the outer peripheral surface of the rotating cathode, the part being opposite to the base material, a rotation drive portion which makes the rotating cathode rotate relative to the magnetic field forming portion with the central axis as a center, a power supply used for sputtering, the power supply applying sputtering voltage on the rotating cathode, a high-density plasma source which generates high-density plasma in the space of the processing space, the space including the part with the magnetic field, and a high-frequency power supply which supplies high frequency electricity for the high-density plasma source.

Sputtering method and apparatus for depositing a coating onto substrate employs variable magnetic field arranged in vicinity of a cathode within a working chamber, filled with ionizable fluid. By controlling a magnetic field topology, i.e. orientation and value of magnetic strength with respect to cathode there is enabled localization and shifting of plasma away from substrate and by thus improvement of adhesion and properties of deposited coatings.

A magnetron sputtering target comprises a magnetron device and a target positioned in a magnetic field of the magnetron device. The magnetron device comprises a metal plate, a plurality of first magnets and second magnets. A direction of the magnetic lines of the first magnets is opposite to that of the second magnets. The first magnets and the second magnets are embedded in the metal plate and arranged in a number of rows and columns. At least one first magnet is adjacent to a second magnet in one row, and at least one first magnet is adjacent to a second magnet in one column, therefore, there are magnetic lines in row direction and column direction exist in the magnetic field of the magnetron device.

The invention relates to a sputter chamber for coating substrates, in which the so-called ''picture frame effect'' is eliminated or at least largely reduced. The thickness of the coating at the margin of a substrate hereby no longer deviates significantly from the thickness of the coating in the center of the substrate. This is attained thereby that the negative effect of the process gas-or of several process gases-which is introduced into the sputter chamber is equalized by an additional inert or reactive gas. At the margins of the substrates to be coated and on the substrate side facing away from the cathode thus an additional gas stream is generated, which is directed counter to the process gas stream.

The invention relates to a device for electronic beams to assist plasma in sputtering coating of a flexibility copper-clad plate, and belongs to the technical field of electronic industry. The device comprises a vacuum chamber and further comprises partition plates, a plurality of electronic beam assisting devices, a plurality of pairs of magnetic control targets, a base material and a running line assembly, all of which are arranged in the vacuum chamber, wherein the running line assembly is used for controlling running of the base material. The running line assembly comprises an unwinding roller, a first guide roller, a first detection roller, a second guide roller, a water cooling drum, a third guide roller, a second detection roller, a fourth guide roller and a winding roller, all of which are sequentially arranged along the base material running path. The multiple pairs of magnetic control targets are arranged in the circumferential direction of the circumferential surface of the water cooling drum. Each of the two sides of each pair of magnetic control targets is provided with one electronic beam assisting device. The unwinding roller, the first guide roller, the first detection roller, the second guide roller, the third guide roller, the second detection roller, the fourth guide roller and the winding roller are located above the partition plates, and the electronic beam assisting devices and the magnetic control targets are located below the partition plates. According to the device, the deposition quality of a metal thin layer is effectively improved, and the binding force between the metal thin layer and the base material is greatly improved.