Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Deposition system and processing system

A processing system and deposition technology, applied in the fields of deposition systems and processing systems, can solve problems such as waste of sputtering materials, and achieve the effects of reducing chemical raw materials, improving utilization, and reducing target costs

Inactive Publication Date: 2008-05-28
ASCENTOOL
View PDF0 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Another disadvantage of the deposition system 200 is that a certain amount of sputtered material is wasted

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Deposition system and processing system
  • Deposition system and processing system
  • Deposition system and processing system

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0051] Referring to FIGS. 3A-3E , a processing system 300 includes a chamber 320 that may be sealed to form a vacuum environment in a space 350 . Processing system 300 may include a sputter deposition system or other types of processing stations as described below. Cavity 320 may include one or more inner cavity walls 321 a - 321 c , one or more outer cavity walls 325 a - 325 c , and end cavity walls 323 and 324 . The inner cavity walls 321a-321c and the outer cavity walls 325a-325c may form one or more pairs of opposing cavity walls.

[0052] A plurality of substrates 315a-315c may be disposed on outer cavity walls 325a-325c, respectively. A plurality of targets 310a-310c may be held on inner cavity walls 321a-321c, respectively. Each target 310 a , 310 b or 310 c includes a sputtering surface 312 facing the space 350 . Each substrate 315a, 315b or 315c includes a deposition surface 317 facing the space 350 and opposite the sputtering surface 312 on the corresponding targe...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A deposition system includes a chamber, a plurality of targets in a center region in the chamber and a plurality of substrates in the chamber. The targets are sequentially positioned when viewed in a first direction. At least one of the targets includes a sputtering surface facing outward. The substrates are sequentially positioned when viewed in the first direction. At least one of the substrates includes a deposition surface configured to receive material sputtered off the sputtering surface.

Description

technical field [0001] The present application relates to apparatus for depositing material onto a substrate. The invention also relates to an apparatus for processing substrates. Background technique [0002] Material deposition is widely used in window glass coating, flat panel display manufacturing, coating on flexible films such as web (web), hard disk coating, industrial surface coating, semiconductor wafer processing, photovoltaic panels, and other in the field. Material deposition can be deposited on the substrate in the form of sputtered targets or evaporated material. A desired feature for material deposition is to maximize the utilization of target material and minimize waste of material. Another desirable feature for material deposition is to obtain a uniform deposition on the substrate. [0003] There are different designs for large substrates in conventional deposition systems. But these designs all have different drawbacks. In a first example, referring t...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C23C14/35C23C14/54C23C14/56C23C28/00
CPCH01J37/3423H01J37/3405H01J37/3408C23C14/352
Inventor 郭信生王开安
Owner ASCENTOOL
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com