Test Structure for Residual Stress of Thick Film Silicon Material on Insulating Substrate

Abstract

The invention provides a structure for testing the residual stress on a thick film silicon material on an insulating substrate. The structure is used for testing the residual stress on the thick film silicon material on the insulating substrate. The structure is composed of a relative electric heating driving unit, a flexibility measuring unit with a micrometer vernier, and a fixed supporting beam unit driven by static electricity. The relative electric heating driving unit is perpendicularly connected with the flexibility measuring unit with the micrometer vernier. The flexibility measuring unit is measured through the vernier. The micrometer vernier is driven by the relative electric heating driving unit to move. The force acting face acting on a fixed supporting beam is reduced through an H-shaped structure at the center of the fixed supporting beam. When static electricity is loaded, the fixed supporting beam is transversely bent, and the flexibility value is measured through the flexibility measuring unit under a certain voltage. The residual stress is calculated through the static electricity, the bending flexibility and the geometric size and Young modulus of the fixed supporting beam. The testing structure, a measuring method and a parameter extracting method are extremely simple.

Description

technical field [0001] The invention provides a test structure for residual stress of thick film silicon material on an insulating substrate. The invention belongs to the technical field of microelectromechanical system (MEMS) material parameter testing. Background technique [0002] The performance of microelectromechanical devices is closely related to material parameters. Due to the influence of processing, some material parameters will change. These uncertain factors caused by processing technology will make device design and performance prediction uncertain and unstable. Case. The purpose of material parameter testing is to be able to measure the material parameters of MEMS devices manufactured by a specific process in real time, monitor the stability of the process, and feed back the parameters to the designer so that the design can be corrected. Therefore, testing without leaving the processing environment and using general-purpose equipment has become a necessary m...

AI Technical Summary

Problems solved by technology

An important problem in the electrostatic drive method is the pull-in phenomenon. Since the pull-in phenomenon is an unsteady state, the accuracy of the measurement data is also unstable. Deformation bending, however, small deformation bending requires micro-displacement measurements

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