Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A flash memory storage system and method for reading, writing and deleting thereof

A technology of flash memory storage and flash memory, which is applied in the field of flash memory storage system and its reading, writing and deletion, and can solve problems affecting the performance of the storage system, etc.

Active Publication Date: 2016-03-23
BEIJING ZETTASTONE TECH CO LTD
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Affects the performance of the entire storage system

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A flash memory storage system and method for reading, writing and deleting thereof
  • A flash memory storage system and method for reading, writing and deleting thereof
  • A flash memory storage system and method for reading, writing and deleting thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0185] Assume that there are 1000 physical storage blocks in total, and the size is 4KB, which is equal to the access size of the front-end application.

[0186] Assuming that the pagesize of the backend flash memory system is 16KB, the cache metadata record table and the cache metadata status table both have 250 entries because they are based on pagesize, 1000*4KB=250*16KB.

[0187] Assume that there are 100 virtual logical storage blocks that the front-end application can see, and the number can be arbitrary. The main purpose is to consider the processing delay and set up a few more to facilitate parallel processing.

[0188] Such as Figures 11 to 15 In the initial state of each data table or memory:

[0189] In the initial state, the write mapping table has allocated the corresponding physical storage block number for each logical block number, such as Figure 11 shown. The read mapping table remains empty, and all entries are written into an invalid physical storage bl...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a flash memory storage system and a reading, writing and deleting method thereof. The flash memory storage system comprises a cache, a main control module, a cache metadata record sheet, a read mapping table and a write mapping table. The write mapping table is used for being stored in the cache and writing in the correspondence of a logical storage block and a physical storage block. The read mapping table is used for being stored in the cache and reading out the correspondence of the logical storage block and the physical storage block. The cache metadata record sheet is used for storing correspondences of metadata sheet addresses, the physical storage blocks and rear end flash memory addresses. By means of the flash memory storage system, the unnecessary write-in or read-out of a rear end flash memory can be reduced, the zero copy on a read-write data channel is achieved, the unnecessary intermediate copy process is omitted, and therefore the read-write efficiency is improved; the size of the read-write access of a front end application can be matched with the size of the rear end flash memory.

Description

【Technical field】 [0001] The invention relates to the field of storage, in particular to a flash memory storage system and methods for reading, writing and deleting thereof. 【Background technique】 [0002] The solid-state storage system using NANDFlash has gradually become a new popular storage system (SolidStateDisk, SSD). With the development of flash memory technology, the single page capacity of MLC (Multi-Level Cell) has gradually developed from 4KB to 8KB, 16KB, and 32KB. With the maturity of TLC technology, the single page capacity will reach 64KB, 128KB or even higher. However, the service life of Flash is limited (25nmMLC erasing times are about 3000 times). [0003] Zero-copy (zero-copy) was originally the main technology for realizing high-speed network interfaces of devices such as hosts or routers. Zero-copy technology later generally refers to reducing the number of data copying and shared bus operations, eliminating unnecessary intermediate copying of data b...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G06F13/16G06F12/06
Inventor 李超丁杰周文刘建伟
Owner BEIJING ZETTASTONE TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com