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Radical chemistry modulation and control using multiple flow pathways

A technology of fluid and fluid channel, which is applied in the field of semiconductor manufacturing process and equipment, and can solve problems such as damage to the substrate

Inactive Publication Date: 2015-05-20
APPLIED MATERIALS INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, local plasmas can damage substrates through the generation of arcs when these plasmas discharge

Method used

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  • Radical chemistry modulation and control using multiple flow pathways
  • Radical chemistry modulation and control using multiple flow pathways
  • Radical chemistry modulation and control using multiple flow pathways

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Embodiment Construction

[0019] The present technology includes systems for semiconductor processing that provide improved fluid delivery mechanisms. Certain dry etch techniques include the use of remote plasma systems to provide radical fluid species into the processing chamber. Exemplary methods are described in commonly assigned patent application Ser. No. 13 / 439079, filed April 4, 2012, which is hereby incorporated by reference to the extent consistent with what is claimed and described herein . When using a dry etchant formulation that may include several radical species, the radical species generated by different fluids may interact differently with the remote plasma chamber. For example, precursor fluids for etching may include fluorine-containing precursors and hydrogen-containing precursors. The plasma aperture of the remote plasma system and distribution components to the processing chamber can be coated or lined to provide protection from reactive free radicals. For example, an aluminum ...

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Abstract

Systems and methods are described relating to semiconductor processing chambers. An exemplary chamber may include a first remote plasma system fluidly coupled with a first access of the chamber, and a second remote plasma system fluidly coupled with a second access of the chamber. The system may also include a gas distribution assembly in the chamber that may be configured to deliver both the first and second precursors into a processing region of the chamber, while maintaining the first and second precursors fluidly isolated from one another until they are delivered into the processing region of the chamber.

Description

[0001] Cross References to Related Applications [0002] This application claims the benefit of U.S. Provisional Application No. 61 / 704,241, filed September 21, 2012, and entitled "Radical Chemistry Modulation and Control Using Multiple Flow Pathways." The entire disclosure of this application is incorporated herein by reference for all purposes. technical field [0003] This technology is related to semiconductor manufacturing process and equipment. More specifically, the technology relates to processing systems having multiple plasma configurations. Background technique [0004] Integrated circuits are made possible by processes that create intricately patterned layers of material on the surface of a substrate. Generating patterned material on a substrate requires a controlled method for removing exposed material. Chemical etching is used for a variety of purposes, including transferring patterns in the photoresist layer into underlying layers, thinning layers, or thinn...

Claims

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Application Information

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IPC IPC(8): H01L21/3065
CPCH01J37/32357H01J37/32899H01L21/3065H01L21/67069C23C16/45514C23C18/1279C23C16/4404C23C16/45561C30B25/14C30B25/08H01J37/32H01J37/32495H01J37/32477H01J37/3244
Inventor N·K·英格尔A·王X·陈
Owner APPLIED MATERIALS INC