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Semiconductor device drive power supply circuit

A driving power supply and semiconductor technology, applied in the electronic field, can solve problems such as unstable positive voltage of the driving power supply circuit

Active Publication Date: 2017-06-16
SHENZHEN HOPEWIND ELECTRIC CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the embodiments of the present invention is to provide a semiconductor device driving power supply circuit, aiming to solve the problem of unstable positive voltage in the existing semiconductor device driving power supply circuit

Method used

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  • Semiconductor device drive power supply circuit
  • Semiconductor device drive power supply circuit
  • Semiconductor device drive power supply circuit

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Embodiment 1

[0042] Embodiment 1 of the present invention provides a driving power circuit for a semiconductor device. Such as image 3 As shown, a power supply circuit for driving a semiconductor device according to Embodiment 1 of the present invention is characterized in that the circuit includes a voltage detection module 10 and a control module 20 connected to each other.

[0043] Wherein, the control module 20 includes a first capacitor C5 , a positive pressure control unit 21 and a negative pressure control unit 22 . The positive pressure control unit 21 and the negative pressure control unit 22 are connected in series, and the first capacitor C5 is connected in parallel with the positive pressure control unit 21 and the negative pressure control unit 22 connected in series. The positive voltage control unit 21 includes a parallel connection of a Zener diode D1 and a first voltage dividing subunit 211 ; the negative voltage control unit 22 includes a parallel connection of a second...

Embodiment 2

[0052] Embodiment 2 of the present invention provides a driving power circuit for a semiconductor device. Such as Figure 4 As shown, the difference between the semiconductor device driving power supply circuit of the second embodiment of the present invention and the first embodiment is that, on the basis of the first embodiment, the second voltage dividing subunit 221 also includes a third capacitor C4, which is connected in parallel with the third resistor R4 . If there is no third capacitor C4, adding all the capacitors to the second capacitor C2 will cause the negative voltage to rise too slowly at the moment of power-on and affect reliability, so the negative voltage capacitor is divided into two parts: the third capacitor C4 and the second capacitor C2, One part is the second capacitor C2 that exists at the moment of power-on, and the other part of the third capacitor C4 is put in when the power supply voltage reaches the semiconductor device that can be turned on norm...

Embodiment 3

[0054] Embodiment 3 of the present invention provides a driving power circuit for a semiconductor device. Such as Figure 5 As shown, the difference between the semiconductor device driving power supply circuit of the third embodiment of the present invention and the second embodiment is that, on the basis of the second embodiment, the first voltage dividing subunit 211 also includes a fourth resistor R3 and a second switch S1, The fourth resistor R3 is connected in series with the second switch S1 and connected in parallel with the second resistor R1 between the positive electrode and the ground.

[0055] The voltage detection module 10 sends a control signal to control the first switch S2 and the second switch S1, and when the input voltage is greater than a preset threshold, the second switch S1 is turned off and the first switch S2 is turned on;

[0056] When the input voltage is lower than the preset threshold, the second switch S1 is turned on and the first switch S2 is...

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PUM

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Abstract

The invention applies to the technical field of electronics, and provides a driving power supply circuit of a semiconductor device. The circuit comprises a voltage detection module and a control module which are mutually connected, wherein the control module comprises a first capacitor C5, a positive-voltage control unit and a negative-voltage control unit, the positive-voltage control unit and the negative-voltage control unit are connected in series, and the first capacitor C5 is in parallel connection with the positive-voltage control unit and the negative-voltage control unit which are connected in series; the positive-voltage control unit comprises a voltage stabilizing diode D1 and a first partial voltage sub-unit which are connected in parallel; the negative-voltage control unit comprises a second capacitor C2, a first resistor R2 and a second partial voltage sub-unit which are connected in parallel; the first partial voltage sub-unit comprises at least one second resistor R1, and the second partial voltage sub-unit comprises a third resistor R4 and a first switch S2 which are connected in series. According to the embodiment, the driving power supply circuit of the semiconductor device solves the problem of unstable positive voltage of a conventional driving power supply circuit of the semiconductor device.

Description

technical field [0001] The invention belongs to the field of electronic technology, and in particular relates to a semiconductor device driving power supply circuit. Background technique [0002] The driving power required by insulated gate semiconductor devices (hereinafter referred to as semiconductor devices) such as IGBT and MOSFET is usually isolated from the power supply of the control board, and a power supply is generated to drive semiconductor devices through transformer isolation through flyback, push-pull and other topologies. From the perspective of cost and safety regulations, the power supply is usually open-loop, that is, the power supply voltage fluctuates as the driving load or input voltage changes. [0003] In order to turn off the semiconductor device reliably, it is usually necessary to add a negative voltage to the semiconductor device. figure 1 Shown is an existing commonly used power supply scheme. In the figure, D1 is a voltage-stabilizing diode, C1...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H02M1/08
CPCH02M1/08
Inventor 吴志猛
Owner SHENZHEN HOPEWIND ELECTRIC CO LTD