Probe height adjusting method and probe position monitoring method

A technology of height adjustment and probe, which is applied in the direction of electrical/magnetic thickness measurement, electrical measurement, measuring device, etc. It can solve problems such as poor contact, difficulty in finding abnormalities of incoming wafers, and damaged probes.

Active Publication Date: 2015-06-17
MICROELECTRONICS TECH INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

If the probe does not have enough needle pressure, there will be poor contact with the wafer, making the measurement data of the wafer inaccurate
In addition, if the needle pressure of the probe is too large, it is easy to damage the probe or cause damage to the wafer surface
[0003] When the traditional edge finder touches the wafer with its probe, it takes a period of time (for example, 20ms) to confirm whether the probe is in contact with the wafer, so it is not easy to shorten the detection time
In addition, when some of the probes on the existing edge fi

Method used

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  • Probe height adjusting method and probe position monitoring method
  • Probe height adjusting method and probe position monitoring method
  • Probe height adjusting method and probe position monitoring method

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Embodiment Construction

[0024] A number of implementations of the present invention will be disclosed below with the accompanying drawings, and many specific details will be described together in the following description for the sake of clarity. It should be understood, however, that these specific details should not be used to limit the invention. That is, in some embodiments of the invention, these specific details are not necessary. In addition, for the sake of simplification of the drawings, some conventional structures and elements will be shown in a simple and schematic manner in the drawings.

[0025] figure 1 It is a flowchart of a probe height adjustment method according to an embodiment of the present invention. Firstly, in step S11 , the lift platform is raised to the spot measurement position, and the lift platform is used to carry the object to be tested. Then in step S12, adjust the two probes of the two probe devices so that the two probes contact the object to be tested, and use t...

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Abstract

The invention discloses a probe height adjusting method including the following steps of lifting a lifting platform to a point testing position, wherein the lifting platform is used for bearing a to-be-tested object; adjusting two probes of two probe devices in order to enable the two probes to be contacted with the to-be-tested object; using two deformation sensing loops in order to enable two sensing elements on two moment arms of the two probe devices to generate a first observed value change and a second observed value change according to deformation amounts of the two moment arms, thereby providing target values of the two probes. Therefore, the approximate target values can be obtained when the two probes are contacted with the to-be-tested object. With the probe height adjusting method, the target values of the probes (probe force gram weight) can be obtained according to the deformation amounts of the moment arms, and the basis for probe height adjustment can be provided. The probe height adjusting method can improve the accuracy of probe force measurement, is high in sensitivity, prevents the probes of the probe devices from damaging the to-be-tested object, and reduces the probe wear. The invention also discloses a probe position monitoring method.

Description

technical field [0001] The invention relates to a probe height adjustment method and a probe position monitoring method. Background technique [0002] The traditional edge sensor (edge ​​sensor) must manually adjust the tightness of the elastic element (such as a spring), and then adjust the needle pressure of the probe. When the stage carrying the wafer rises up to touch the probe of the edge finder, the probe will be supported by the wafer and move upward. If the probe does not have enough needle pressure, the contact with the wafer will be poorly contacted, and the measurement data of the wafer will be inaccurate. In addition, if the needle pressure of the probe is too large, it is easy to damage the probe or cause damage to the wafer surface. [0003] It takes a period of time (for example, 20 ms) to confirm whether the probes are actually in contact with the wafer when the probes of the traditional edge finder touch the wafer, so it is difficult to shorten the detecti...

Claims

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Application Information

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IPC IPC(8): G01B7/00G01B7/06G01B7/28G01R31/26G01R1/073G05D3/12
Inventor 彭柏翰黄大猷
Owner MICROELECTRONICS TECH INC
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