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Correction equipment of focusing ring

A focusing ring and equipment technology, applied in ion implantation plating, metal material coating process, coating and other directions, can solve problems such as small cracks in the metal layer, discharge defects, and peeling of the metal layer.

Active Publication Date: 2015-06-24
KONFOONG MATERIALS INTERNATIONAL CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The existing correction process generally uses manpower to bend the port of the focus ring and restore the openings 11 and 12 of the focus ring to their original positions. However, when the focus ring is used, the installation accuracy is high, and it often requires repeated corrections by manpower to return to its original position. Moreover, during repeated corrections, the connection structure between the metal layer attached to the focus ring and the focus ring will be destroyed, resulting in small cracks in the metal layer attached to the focus ring or breakage of part of the attached film (often unrecognizable by the human eye), Therefore, during the secondary use of the focus ring, this part of the metal layer will peel off, or the ions in the sputtering process will hit this part of the metal layer and there will be discharge defects, thereby reducing the quality of the coating film, and even causing the coating process to fail.

Method used

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  • Correction equipment of focusing ring
  • Correction equipment of focusing ring
  • Correction equipment of focusing ring

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Embodiment Construction

[0041] As mentioned in the background art, the existing process of correcting the focus ring that has undergone a sputtering process has low efficiency, and it is often necessary to correct the focus ring repeatedly in the correction process to return the deformed part of the focus ring to its original position. In the process of repeated corrections, the connection strength between the metal layer and the focus ring formed on the surface of the focus ring in the first sputtering process will be destroyed, causing defects such as deformation or fracture of the metal layer, which will lead to focusing During the secondary use of the ring, the metal layer peels off, or discharge defects occur after the sputtered ions hit the deformed part of the metal layer, which affects the quality of the final coating film.

[0042]To this end, the present invention provides a correction device for the focus ring, which can effectively improve the correction efficiency of the focus ring, and c...

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Abstract

Disclosed is correction equipment of a focusing ring. A correction supporting rod is mounted on a base which is used for bearing the focusing ring, and the correction supporting rod is movably connected to the base through a rotating shaft; a pressure application supporting point is arranged at one end of the correction supporting rod, and a correction judgment component is arranged on one side of the correction supporting rod. The pressure application supporting point of the correction supporting rod supports a to-be-corrected portion of the focusing ring, and then rotates around the rotating shaft to correct the supporting rod, force is applied to the focusing ring to correct the focusing ring, and the deformation portion of the focusing ring returns to the original position. In the correction process, when the focusing ring touches the correction judgment component, which shows that the focusing ring is corrected. On the basis of the lever principle, the correction equipment can easily and rapidly deform the focusing ring, the correction judgment component can effectively judge whether the focusing ring is corrected in place or not, and therefore the focusing ring can be rapidly and efficiently corrected.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a correction device for a focus ring. Background technique [0002] Sputtering is a thin-film deposition technology commonly used in the production process of modern semiconductor chips. It uses high-energy particles to bombard a high-purity target, so that the target atoms escape from the surface and are evenly deposited on the substrate to form a uniform thin film. Layers are used to form various barrier layers, interconnect lines and contact layers of integrated circuits on the substrate. However, during the sputtering process, since the high-energy particles bombard the target from all directions, the target atoms escaping from the target surface will break away from the target surface from all directions, and then reach the wafer surface along a straight line, which cannot guarantee the substrate The uniformity of the thin film layer deposited in each part affects...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/34
Inventor 姚力军赵凯相原俊夫大岩一彦潘杰王学泽李小萍
Owner KONFOONG MATERIALS INTERNATIONAL CO LTD