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Imprinted memory

A memory, imprinting technology, applied in static memory, read-only memory, information storage, etc., can solve problems such as limiting the wide application of mask-ROM

Inactive Publication Date: 2015-07-01
HANGZHOU HAICUN INFORMATION TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

After 90nm, the high cost of data mask will greatly limit the wide application of mask-ROM

Method used

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Embodiment Construction

[0015] In order to reduce data entry costs, the present invention proposes an imprinted memory, especially a three-dimensional imprinted memory (3D-iP for short). As far as its final physical structure is concerned, embossed memory is exactly the same as mask-ROM, and they both use data patterns in their data entry film to store data. The difference between imprinted memory and mask-ROM is that they use different data entry methods: mask-ROM uses photolithography, and imprinted memory uses embossing. However, the data templates used in imprinting are much cheaper than the data masks used in photolithography.

[0016] The imprint method achieves graphic conversion by applying pressure on the template to mechanically deform the imprint resist (see Chou et al. "Imprint-lithography with 25-nanometer resolution", Science Magazine, Vol. 272, 5258, pp. 85-87). Examples of imprint methods include thermoplastic nano-imprint lithography, photo nano-imprint lithography, electro-chemica...

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Abstract

Wide application of a mask-programmed read-only memory (mask-ROM) is greatly restricted by high data mask cost. The invention provides an imprinted memory (imprinted memory), especially a three-dimensional imprinted memory (3D-iP for short). Data are recorded by an imprinted lithography (imprinted-lithography). The imprinted lithography is also named nano-imprinted lithography (NIL for short); and the cost price of the adopted data template (template) is lower than that of a data mask adopted by a photolithography.

Description

technical field [0001] This invention relates to the field of integrated circuit memories and, more particularly, to mask-programmed read-only memories (mask-ROMs). Background technique [0002] Mask-ROM is used to store publications. It contains a data entry membrane. The graphics in the data entry film are data graphics, which represent the data it stores. figure 1 The mask-ROM embodiment is a cross-point (cross-point) array memory. It contains multiple top address lines (eg 2a-2d), bottom address lines (eg 1a-1d) and storage elements (eg 5aa-5dd). The width of the address line is f. Its data entry film is a layer of isolation dielectric film 3b, which blocks the current flow between the top address line and the bottom address line, and distinguishes the different states of the storage element through the presence or absence of data openings (such as channel holes). If there is a data opening at the storage unit 5aa, it represents '1'; there is no data opening at the ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C17/10H01L27/112H10B20/00
Inventor 张国飙
Owner HANGZHOU HAICUN INFORMATION TECH