Manufacturing method of vertical double diffused metal oxide semiconductor field effect transistor

Abstract

The invention provides a method for manufacturing a vertical double-diffusion metal oxide semiconductor field effect transistor. The method includes: depositing an insulating layer on the surface of the silicon nitride layer; performing reflow treatment on the insulating layer at a set temperature, and the set temperature is lower than the threshold temperature of drain-source soft breakdown. In the manufacturing method of the vertical double-diffused metal oxide semiconductor field effect transistor provided by the present invention, the insulating layer is reflowed at a set temperature lower than the threshold temperature of the drain-source soft breakdown, and the source is reduced by reducing the temperature during the reflow process. The distance of lateral diffusion in the region becomes shorter, and the effective channel length of the body region becomes longer, which reduces the risk of the body region depletion layer punching through to the source region under the reverse biased state of the device body region / epitaxial layer drift region junction, and achieves the solution of device leakage. source for soft breakdown purposes. Moreover, the method basically has no influence on the remaining electrical parameters of the device, thereby avoiding waste of manpower and material resources.

Description

technical field [0001] The invention relates to the technical field of manufacturing semiconductor devices, in particular to a method for manufacturing a vertical double-diffused metal oxide semiconductor field effect transistor. Background technique [0002] Vertical Double-diffusion Metal Oxide Semiconductor (VDMOS) combines the advantages of bipolar transistors and Metal Oxide Semiconductor (MOS), and has a nearly infinite The quiescent input impedance and very fast switching time make it an ideal power device for both switching and linear applications. [0003] figure 1 It is a schematic diagram of the structure of a vertical double-diffused metal-oxide-semiconductor field effect transistor, such as figure 1 As shown, it includes: a substrate 11, an epitaxial layer 12 disposed on the surface of the substrate 11, a partially etched gate oxide layer 13 disposed on the surface of the epitaxial layer 12, and a partially etched gate oxide layer disposed on the surface of th...

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Problems solved by technology

[0006] The invention provides a method for manufacturing a vertical double-diffused metal oxide semiconductor field effect transistor, which is used to solve the problem in the prior art that while solving the soft breakdown of the drain source of the VDMOS device, the remaining electrical parameters of the VDMOS device will be relatively large. Large changes, and the return of these electrical parameters to the target value wastes a lot of manpower and material resources

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