One-time programming in reprogrammable memory

A technology of storage elements and storage devices, applied in static memory, read-only memory, digital storage information, etc., can solve the problem that OTP storage devices consume large silicon area, reprogrammable storage devices cannot be easily surveyed or read, storage device design Issues such as time and die size consumption

Inactive Publication Date: 2015-09-16
NXP BV
View PDF6 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Replication of memory devices can be very costly in terms of design time and die size
Furthermore, OTP memory devices consume relatively large silicon area compared to some types of reprogrammable memory devices
Furthermore, O

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • One-time programming in reprogrammable memory
  • One-time programming in reprogrammable memory
  • One-time programming in reprogrammable memory

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0015] It will be readily appreciated that portions of the embodiments generally described herein and illustrated in the drawings may be arranged and designed in many different configurations. Accordingly, the following more detailed description of the various embodiments is not intended to limit the scope of the present disclosure, but merely exemplifies the various embodiments, as illustrated. While various aspects of the embodiments are shown in the drawings, the drawings are not necessarily drawn to scale unless specifically indicated.

[0016] The present invention may be embodied in other specific forms without departing from the spirit and essential characteristics of the present invention. The described embodiments are to be considered in all respects as illustrative and not restrictive. The scope of the invention is therefore indicated by the appended claims rather than by this detailed description. All changes that come within the meaning and range of equivalency o...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

A portion of a reprogrammable storage device is used to implement permanent data storage. The storage device includes a plurality of electrically erasable memory elements and a controller. The plurality of electrically erasable memory elements are configured to store data. Each memory element is programmable a number of write cycles before reaching a write failure state. The controller is coupled to the plurality of memory elements. The controller includes a receiver and a write engine. The receiver receives an instruction to drive a selected memory element to the write failure state. The write engine repeatedly writes a data value, in a plurality of write operations, to the selected memory element until the write failure state of the selected memory element is established.

Description

Background technique [0001] Electronic storage devices may generally be classified as one-time programmable (OTP) storage devices or reprogrammable storage devices. There is another type of specialized memory known as Multiple Time Programmable (MTP) memory, which involves changes to the wafer production process. [0002] OTP memory devices have memory elements accompanied by fuses and antifuses. Once a data value is programmed into the OTP storage element, a fuse is blown to create a permanently open circuit, or an anti-fuse is programmed to create a permanently closed circuit. This prevents the OTP storage elements from being reprogrammed to store different data values. OTP storage elements hold written data values ​​indefinitely, or as long as the stored state can be physically maintained by the storage element (data retention can be limited by electron drift through insulators such as floating gate transistors middle). [0003] Reprogrammable storage devices allow indi...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): G11C16/06
CPCG11C13/0059G11C13/0035G11C7/1045G11C2013/0083G06F3/0652G06F3/0619G11C11/005G06F2206/1014G11C17/165G11C13/0069G06F3/0679G11C16/22
Inventor 马克·沃克莱尔菲利普·特温
Owner NXP BV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap