semiconductor device
A semiconductor and conductive technology, applied in the direction of semiconductor devices, transistors, diodes, etc., can solve the problems of inability to achieve miniaturization, larger converter circuit modules, and higher costs
Active Publication Date: 2018-05-01
KK TOSHIBA
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- Abstract
- Description
- Claims
- Application Information
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Problems solved by technology
However, if the semiconductor chip having the switching element and the chip having the freewheeling diode are separate chips, the module such as the inverter circuit becomes larger, and the size of the module cannot be reduced, and the cost also increases.
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Embodiment Construction
[0014] Embodiments will be described below with reference to the drawings. In the following description, the same reference numerals are assigned to the same components, and descriptions of components that have been described once are appropriately omitted.
[0015] figure 1 (a) and figure 1 (b) is a schematic cross-sectional view showing the semiconductor device of the present embodiment.
[0016] figure 2 It is a schematic plan view showing the semiconductor device of this embodiment.
[0017] here, figure 1 In (a), it means figure 2 The profile of the A-A' line, figure 1 In (b), it means figure 2 The profile of the line BB'. also, figure 2 in, means figure 1 (a), (b) CC' line section.
[0018] The semiconductor device 1 is a MOSFET (Metal Oxide Semiconductor Field Effect Transistor, Metal Oxide Semiconductor Field Effect Transistor) having a top and bottom electrode structure of a freewheeling diode. In this embodiment mode, an n-channel MOSFET is shown as a...
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The present invention provides a semiconductor device that achieves miniaturization and cost reduction. A semiconductor device according to an embodiment includes: a first electrode; a second electrode; a first semiconductor region of the first conductivity type provided between the first electrode and the second electrode; a second semiconductor region of the second conductivity type disposed therebetween; a third semiconductor of the first conductivity type having a higher impurity concentration than the first semiconductor region and disposed between the second semiconductor region and the second electrode region; a third electrode in contact with the third semiconductor region, the second semiconductor region, and the first semiconductor region via an insulating film; and a second conductivity type electrode provided between the first semiconductor region and the second electrode. a fourth semiconductor region; and a fifth semiconductor region of the first conductivity type having a higher impurity concentration than the first semiconductor region provided between the fourth semiconductor region and the second electrode.
Description
[0001] Cross References to Related Applications [0002] This application claims the priority of the basic application based on Japanese Patent Application No. 2014-52801 (filing date: March 14, 2014). This application incorporates the entire content of the basic application by referring to this basic application. technical field [0003] Embodiments of the present invention relate to semiconductor devices. Background technique [0004] An inverter circuit or the like includes a switching element (such as a MOSFET) and a freewheel diode connected in parallel to the switching element. When the inverter is operating, a current flows through the freewheel diode (reverse conduction state), thereby preventing damage to the switching element. However, when the semiconductor chip having the switching element and the chip having the freewheeling diode are separate chips, the module such as the inverter circuit becomes larger, and the size of the module cannot be reduced, and the c...
Claims
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IPC IPC(8): H01L29/78H01L29/06
CPCH01L29/7805H01L29/0696H01L29/086H01L29/1608H01L29/1095H01L29/7804
Inventor 河野洋志野田隆夫
Owner KK TOSHIBA