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How to make deep grooves

A manufacturing method and deep groove technology, which are applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems affecting device reliability, improve reliability, avoid over-etching, and avoid over-etching at the bottom Effect

Active Publication Date: 2018-05-04
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This will seriously affect the reliability of the device

Method used

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  • How to make deep grooves
  • How to make deep grooves
  • How to make deep grooves

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Embodiment Construction

[0031] The method for making the deep groove of the present invention will be described in more detail below in conjunction with the schematic diagram, wherein a preferred embodiment of the present invention is shown, and it should be understood that those skilled in the art can modify the present invention described here, and still realize the advantages of the present invention Effect. Therefore, the following description should be understood as the broad knowledge of those skilled in the art, but not as a limitation of the present invention.

[0032] In the following paragraphs the invention is described more specifically by way of example with reference to the accompanying drawings. Advantages and features of the present invention will be apparent from the following description and claims. It should be noted that all the drawings are in a very simplified form and use imprecise scales, and are only used to facilitate and clearly assist the purpose of illustrating the embod...

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Abstract

A deep groove manufacturing method disclosed by the present invention comprises the steps of providing a front-end structure, wherein an initial deep groove is formed on the front-end structure; forming an AMR layer, a first blocking layer and a second blocking layer on the front-end structure orderly; filling a photoetching filling material layer in the initial deep groove, and covering the front-end structure; forming a patterned first photoresistance layer, and then opening the photoetching filling material layer to expose a part of the second blocking layer located at the bottom of the initial deep groove; removing the part of the exposed second blocking layer located at the bottom of the initial deep groove and the first blocking layer below the second blocking layer to expose the AMR layer; removing the photoetching filling material layer and the first photoresistance layer to form a patterned second photoresistance layer, and exposing a part of the second blocking layer; removing the part of the exposed second blocking layer and the first blocking layer below the second blocking layer to expose the AMR layer; removing the second photoresistance layer to obtain the needed deep groove. The side wall and bottom wall of the deep groove obtained by the method are flat, and the device reliability is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for manufacturing a deep groove. Background technique [0002] In recent years, with the development of micro-electromechanical system (Micro-Electrico-Mechanical-System, MEMS) technology, various micro-electromechanical devices, including: micro-sensors, micro-actuators, etc., have achieved miniaturization, which is beneficial to Improve device integration, so MEMS has become one of the main development directions. [0003] Nowadays, microelectromechanical systems manufactured using anisotropic magnet resistive (AMR) have the characteristics of high sensitivity, good thermal stability, low material cost, and simple preparation process, and have been widely used. Please refer below as Figure 1-5 A schematic diagram of the structure of the MEMS device in the prior art shown. [0004] like figure 1 As shown, firstly, a front end structure 1 is provided on which...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/762H01L21/311
CPCH01L21/311H01L21/76
Inventor 张振兴奚裴熊磊
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP