Unlock instant, AI-driven research and patent intelligence for your innovation.

Surface-selective polishing composition

A technology of composition and water-soluble polymer, applied in the direction of polishing composition containing abrasive, polishing composition, other chemical processes, etc., can solve the problem that the grinding speed of silicon nitride cannot be fully satisfied

Inactive Publication Date: 2015-10-07
FUJIMI INCORPORATED
View PDF6 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this abrasive composition also cannot adequately meet user requirements related to the abrasive speed of silicon nitride.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Surface-selective polishing composition
  • Surface-selective polishing composition
  • Surface-selective polishing composition

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0084] The following sample A was obtained as a polishing composition: colloidal silica containing sulfonic acid covalently bonded to the surface (average primary particle size about 35 nm, average secondary particle size about 70 nm): 0.5%, lactic acid: 0.09% , Polyoxyethylene (20) stearyl ether: 200 ppm, and the pH of the slurry was adjusted to 3. In addition, in the sample A, except that the polyoxyethylene (20) stearyl ether was not contained, the composition of the same composition was prepared, and the sample B was obtained. Using Sample A and Sample B as polishing compositions, for the wafer surfaces of tetraethyl orthosilicate (TEOS), polysilicon, and SiN, which are silicon oxides with a diameter of 200 mm, using a soft polyurethane pad (Shore A63 hardness), the polishing was carried out. The supply speed of the composition slurry was set to 300 mL / min, the grinding pressure was set to 2 psi, and the platen rotation speed was set to 120 rpm, and grinding was performed....

Embodiment 2

[0087] Using Sample A and Sample B obtained in Example 1, using a soft polyurethane pad (Shore hardness A63), for a TEOS wafer with a diameter of 300 mm, the supply speed of the polishing composition slurry was 200 mL / min, and the polishing pressure was set to 200 mL / min. Grinding was carried out at 2 psi and the rotation speed of the platen at 95 rpm. Regarding the polished TEOS wafer, the number of surface defects before and after the HF treatment was measured using an optical interference type wafer surface inspection apparatus. put the result in figure 2 shown in the diagram.

[0088] By using Sample A, which is the polishing composition of the present invention, the number of surface defects can be greatly reduced.

Embodiment 3

[0090] Using the sample A obtained in Example 1 and the sample A (concentration) of the polishing composition obtained by concentrating the sample A by 4 times, a hard polyurethane pad (Shore hardness D60) and a soft polyurethane pad (Shore hardness A63) were used, respectively. , for TEOS, polysilicon, and SiN wafers with a diameter of 300 mm, the supply speed of the polishing composition slurry was set to 300 mL / min, the grinding pressure was set to 2 psi, and the platen rotation speed was set to 100 rpm, and the grinding was carried out. The grinding speed is image 3 shown in the diagram.

[0091] It was found that a high polishing rate ratio of SiN to TEOS and polysilicon can be obtained by using Sample A and its concentrated composition as the polishing composition of the present invention, and that the polishing rate decreases when the concentration of the polishing composition decreases.

[0092] [Table 1]

[0093]

[0094] u...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
particle diameteraaaaaaaaaa
Shore hardnessaaaaaaaaaa
Login to View More

Abstract

The disclosure provides polishing compositions that show a high polishing rate ratio of a silicon nitride (SiN) surface to a silicon oxide surface, and / or of a SiN surface to a polycrystalline silicon (Poly Si) surface. Such compositions comprise, in certain aspects, of colloidal silica, and one or more water soluble polymers, and has a pH of 6 or less, wherein the colloidal silica comprises one or more organic acids bound to its surface, and the water soluble polymer is a polyoxyalkylene hydrocarbyl ether which hydrocarbyl moiety has 12 or more carbon atoms.

Description

technical field [0001] The present invention relates to a silicon nitride (SiN) surface with respect to a silicon oxide surface with a high grinding rate ratio and / or a SiN surface with a high grinding rate ratio with respect to a polysilicon (polysilicon) surface, comprising silicon and a water-soluble polymer. Abrasive composition. Background technique [0002] In the process of removing the silicon nitride film in the manufacture of semiconductor devices, for example, various situations such as removing the silicon nitride film as a barrier film in the step of forming the element isolation structure can be seen. Wet etching process using phosphoric acid-nitric acid mixed solution etc. is implemented at high temperature of about 150 degreeC, and the grinding|polishing process using abrasive grains is hardly used. [0003] For example, in the method described in Patent Document 1, phosphoric acid or a phosphoric acid derivative is added to silicon oxide abrasive grains so ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C09K3/14C09G1/02H01L21/304
CPCC09G1/18H01L21/31053C09K3/1463C09G1/02C09G1/06
Inventor 金辉星安妮·米勒
Owner FUJIMI INCORPORATED