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A soi-based mz-type acousto-optic modulator

An acousto-optic modulator and sound wave technology, which is applied in the directions of instruments, optics, nonlinear optics, etc., can solve the problems that the wavelength of the surface acoustic wave is difficult to determine, and the distance between the two arms of the MZ optical waveguide is difficult to set accurately, and achieves perfect compatibility with CMOS technology, Realize the effect of large-scale integration and low working voltage

Active Publication Date: 2018-02-09
ZHEJIANG UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] The object of the present invention is to provide a kind of MZ type acousto-optic modulator based on SOI, introduce the interdigital transducer between the two arms of Mach-Zehnder optical waveguide (being MZ optical waveguide), solve the traditional acousto-optic modulator Due to the difficulty of determining the wavelength of the surface acoustic wave, it is difficult to accurately set the distance between the two arms of the MZ optical waveguide

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  • A soi-based mz-type acousto-optic modulator
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  • A soi-based mz-type acousto-optic modulator

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Embodiment Construction

[0022] The present invention will be further described below in conjunction with the accompanying drawings and embodiments.

[0023] Such as image 3 As shown, the present invention includes an MZ optical waveguide 1, a zinc oxide piezoelectric layer 2 and an interdigital transducer 3, and the interdigital transducer 3 is located on the zinc oxide piezoelectric layer 2; the zinc oxide piezoelectric layer 2 is located on the MZ optical waveguide 1 On the top layer of silicon between the two arms, MZ optical waveguide 1, zinc oxide piezoelectric layer 2 and interdigital transducer 3 are spatially distributed from bottom to top.

[0024] Such as image 3 , Figure 4 As shown, the interdigital transducer 3 is located on the zinc oxide piezoelectric layer 2 between the two arms of the MZ optical waveguide 1, and the distance between the center of the interdigital transducer 3 and the two arms of the MZ optical waveguide 1 is equal.

[0025] Such as Figure 4 , Figure 5 As sho...

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Abstract

The invention discloses an MZ acoustic optical modulator based on SOI. The MZ acoustic optical modulator based on the SOI comprises an MZ optical waveguide, a zinc oxide piezoelectric layer and an interdigital transducer. The interdigital transducer is arranged on the zinc oxide piezoelectric layer. The zinc oxide piezoelectric layer is arranged on a top silicon layer between two arms of the MZ optical waveguide. The MZ optical waveguide, the zinc oxide piezoelectric layer and the interdigital transducer arranged from the bottom to the top. According to the MZ acoustic optical modulator based on SOI, an interdigital electrode is used for exciting surface acoustic wave, the effective refractive index of the optical waveguide can be changed through the surface acoustic wave and the acoustic optical effect, so acoustic optical modulation can be achieved. The MZ acoustic optical modulator based on the SOI can be applied to integrated optical design, the MZ acoustic optical modulator is manufactured on very common SOI, the cost is low, the performance is good, and the loss is low, and the MZ acoustic optical modulator is perfectly compatible with the COMOS technology. The MZ acoustic optical modulator is simple in structure easy to manufacture, energy saving and environmental friendly because a work voltage applied to the MZ acoustic optical modulator is low, so the MZ acoustic optical modulator can be used for large scale integration.

Description

technical field [0001] The invention relates to a silicon-based MZ-type acousto-optic modulator, in particular to an SOI-based MZ-type acousto-optic modulator using surface acoustic waves as modulation signals. Background technique [0002] Silicon-based integrated photonics based on SOI (Silicon-On-Insulator) materials is a research hotspot in recent years. Compared with optoelectronic integration technologies of other materials, its advantages are: First, Si and SiO 2 The refractive index difference is large and the ability to confine light is strong, which is conducive to reducing the size of the device. Secondly, the manufacturing process of silicon-based optoelectronic devices based on SOI is fully compatible with the CMOS process, so it is conducive to large-scale and low-cost manufacturing of integrated optoelectronic chips. Monolithic integration of circuits. Based on the above reasons, silicon-based integrated photonics has been widely used in the fields of optical...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G02F1/11
CPCG02F1/11G02F1/113
Inventor 余辉秦晨叶乔波赵昌云江晓清
Owner ZHEJIANG UNIV