Method for establishing metal-insulator-metal capacitor model

Abstract

The invention relates to a method for establishing a metal-insulator-metal capacitor model. The method comprises following steps: step (a), designing metal-metal-insulator-metal capacitor testing structural models; step (b), establishing model equations and formats based on the testing structural models in the step (a); and step (c), extracting a model based on the model equations and the formats in the step (b) in order to obtain the metal-insulator-metal capacitor model.The method for establishing the metal-insulator-metal capacitor model has following beneficial effects: dimensions selected by the method can be changed into a signal model; the model comprises multiple metal layers, each of which comprises a first comb-type structure and a second comb-type structure; combing teeth are parallel to one another and staggered; the model only consumes less modeling time and occupies fewer pictural area of a testing version so that cost of a product is further decreased; and the model can be used much more freely so that efficiency is increased.

Description

technical field [0001] The invention relates to the field of semiconductors, and in particular, the invention relates to a method for establishing a metal-insulator-metal capacitance model. Background technique [0002] For the increasing demand for high-capacity semiconductor storage devices, the integration density of these semiconductor storage devices has attracted people's attention. In order to increase the integration density of semiconductor storage devices, many different methods have been adopted in the prior art, such as by reducing the wafer size. And / or change the internal structure unit to form multiple memory cells on a single wafer. [0003] With the continuous development of semiconductor technology, integrated circuits and large-scale integrated circuits are widely used. The components that make up integrated circuits can be passive or active. When the components are passive devices, they become integrated passive devices. Integrated passive device (IPD), ...

AI Technical Summary

Problems solved by technology

[0004] The passive device includes a metal-insulator-metal capacitor. Due to its superior performance, the metal-insulator-metal capacitor is more and more used in ICs. The metal-insulator-metal capacitor described in the prior art The capacitor model is made of metals, but the model is only applicable to the specific layout structure

[0005] Although there are a few metal-insulator-metal capacitor models in the prior art, the model only uses one type of metal layer to form a model to describe the performance of the metal-insulator-metal capacitor. For example, the first When the metal layer M1 to the sixth metal layer M6 are combined to form a capacitor, a model needs to be provided, and when the second metal layer M2 to the sixth metal layer M6 are combined to form another metal capacitor, another model needs to be provided, provided by the customer The model cannot be freely fully utilized, but only the model provided by the customer can be used, but as the size of the wafer decreases, it is impossible to set up enough detection structures on the wafer to extract all the metal-insulator-metal capacitance Model

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