A metal-insulator-metal (MIM) capacitor having a large capacitance, and a method of manufacturing the same, includes forming a lower electrode on a semiconductor substrate, sequentially forming a first dielectric film, an intermediary electrode, and a second dielectric film on an upper surface of the lower electrode, forming an inter-metal insulating layer on an upper surface of the second dielectric film, etching predetermined portions of the inter-metal insulating layer to form an upper electrode region and via hole regions, selectively etching the second dielectric film exposed in a portion of the via hole regions to expose the intermediary electrode, and forming a metal layer on the upper electrode region and the via hole regions, thereby forming an upper electrode and contact plugs.