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A method for adjusting hrp resistance value

A technology of resistance value and resistance value, applied in the field of adjusting HRP resistance value, can solve problems such as deviation of HRP resistance value target value, inability to adjust HRP resistance value online in time, and inability to guarantee the accuracy of HRP resistance value, etc. Effect

Active Publication Date: 2017-12-29
SEMICON MFG INT (SHANGHAI) CORP
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  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In view of the above-mentioned shortcomings of the prior art, the object of the present invention is to provide a method for adjusting the resistance value of HRP. By fine-tuning the resistance value of HRP effectively, the resistance value of HRP can be adjusted to the target value, which is used to solve the current problem. In the existing technology, due to the slight changes in the production machines in each step, the HRP resistance value has a large deviation from the target value, and in the prior art, the HRP resistance value cannot be adjusted online in time, and can only be adjusted according to the final electrical properties of the finished semiconductor chip. The test results need to be greatly adjusted, and the accuracy of the HRP resistance value cannot be guaranteed.

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  • A method for adjusting hrp resistance value
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  • A method for adjusting hrp resistance value

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Embodiment Construction

[0042] Embodiments of the present invention are described below through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific implementation modes, and various modifications or changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present invention.

[0043] see figure 1 , the embodiment of the present invention relates to a method for adjusting the resistance value of HRP. It should be noted that the diagrams provided in this embodiment are only schematically illustrating the basic idea of ​​the present invention, and only the components related to the present invention are shown in the diagrams rather than the number, shape and shape of the components in actual implementation. D...

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Abstract

The invention provides a method for adjusting resistance of an HRP. The HRP at least comprises a polysilicon layer. The method at least comprises the following steps of a step S1, monitoring the polysilicon layer and acquiring monitoring data; a step S2, pre-estimating the resistance of the HRP according to the monitoring data; and a step S3, when a difference between the pre-estimated resistance of the HRP and a target value, forming a masking layer on the polysilicon layer in online production process of a semiconductor chip, and adjusting the transparency of the masking layer according to the pre-estimated resistance of the HRP for making the resistance of the HRP achieve a target value. According to the method of the invention, through collection of online monitored polysilicon layer key dimension data and offline monitored polysilicon layer resistance data, the resistance of the HRP is pre-estimated. When the difference between the pre-estimated resistance of the HRP and the target value exists, the resistance of the HRP can be adjusted in time in online production process of a semiconductor chip, thereby improving stability of the semiconductor chip.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for adjusting the resistance value of HRP. Background technique [0002] In semiconductor chips, high-resistance fixed resistors are commonly used as devices and are often designed as SOI (Silicon isolator, silicon-on-insulator structure), and HRP (High Resistance Polysilicon, high-resistance polysilicon resistors) are high-resistance fixed resistors One, the silicon structure in HRP is realized by polysilicon, and the polysilicon layer of HRP and the gate of MOS device or one layer of polysilicon of PIP (Poly-Si Isolator Poly-Si, polysilicon-insulator-polysilicon) are generated simultaneously, No additional fabrication in the semiconductor chip is required. With the continuous upgrading of integrated circuits, the size of semiconductor chips is required to be smaller and smaller, the precision is higher and higher, and the response speed is faster and faster. At...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/02H01L21/66
Inventor 裴明俊徐杰刘丽丽
Owner SEMICON MFG INT (SHANGHAI) CORP
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