Backup semiconductor laser based on reconstruction-equivalent chirp technology

Abstract

The invention discloses a backup type semiconductor laser based on a reconstructing-equivalent chirp technology, wherein the backup type laser comprises two parallel semiconductor DFB lasers; the semiconductor DFB lasers are distributed parallelly and the interval distance is within the range of 15 micrometer to 50 micrometer; each of the leasers is utilized to add equivalent phase shift to a sampling bragg grating structure based on the reconstructing-equivalent chirp technology; and a lasing channel used by each of the lasers is provided by plus 1 level sub-grating or minus 1 level sub-grating of the sampling bragg grating. By adopting the laser provided herein, one laser of the two parallel lasers must be in the single model working state, thus eliminating the problem of low yield of high reflection-low reflection coated laser single models on the basis of not adding technology cost.

Description

technical field [0001] The invention belongs to the field of optoelectronic technology, relates to optical fiber communication and photon integration, and proposes a structure design and manufacturing method of a backup semiconductor laser, which can improve the single-mode yield without increasing the manufacturing cost. Background technique [0002] Optical communication has developed rapidly in recent decades and has gradually become the most mainstream information transmission method. There are three main reasons for this: First, light has a huge bandwidth, generally hundreds of THz, which is much larger than traditional electromagnetic wave signals, so it can At the same time, a large amount of information is transmitted; 2. Light can be easily transmitted, and the cost loss of the optical fiber used to transmit optical signals is very low, and at the same time, it has strong anti-interference ability; 3. The generation and detection of light have been greatly developed....

AI Technical Summary

Problems solved by technology

When the phase of the grating on the high-antiface is near π, the laser can obtain good single-mode characteristics, but when the phase of the grating is near 0 or 2π, the single-mode characteristics of the laser are very poor

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