Semiconductor device
A technology for semiconductors and devices, applied in the field of semiconductor devices, can solve the problem of not being able to sufficiently reduce inductance, and achieve the effect of reducing inductance and improving working performance
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Embodiment approach 1
[0029] Below, use Figure 1 ~ Figure 3 One embodiment of the present invention will be described in detail.
[0030] (Structure of Semiconductor Device 100)
[0031] First, use figure 1 and figure 2 The structure of the semiconductor device 100 of this embodiment will be described. figure 1 and figure 2 are a top view and a side view of the semiconductor device 100 . In addition, in figure 2 In , illustration of the conductive member 133 , the conductive member 134 and the second terminal 104 is omitted.
[0032] like figure 1 As shown, the semiconductor device 100 includes a normally-on field effect transistor 101 (hereinafter referred to as transistor 101 for short), a normally-off field effect transistor 102 (hereinafter referred to as transistor 102 for short), a first terminal 103 (drain terminal DT) , a second terminal 104 (gate terminal GT), a die pad 105 and a sealing member 106 . The transistor 101 has a higher breakdown voltage than the transistor 102 ...
Embodiment approach 2
[0052] Regarding other embodiments of the present invention, based on Figure 4 It is explained as follows. In addition, for the convenience of description, the same code|symbol is attached|subjected to the member which has the same function as the member demonstrated in the said embodiment, and the description is abbreviate|omitted.
[0053] (Structure of the semiconductor device 200 )
[0054] Below, use Figure 4 The structure of the semiconductor device 200 of the present embodiment will be described. Figure 4 is a top view of the semiconductor device 200 . In addition, the structure of the semiconductor device 200 viewed from the side is the same as figure 2 The structure of the shown semiconductor device 100 is the same.
[0055] like Figure 4 As shown, the semiconductor device 200 has a normally-off field effect transistor 202 (hereinafter referred to as a transistor 202 ) in place of the normally-off field effect transistor 102 in the structure of the semicond...
Embodiment approach 3
[0062] Other embodiments of the present invention are based on Figure 5 ~ Figure 6 It is explained as follows. In addition, for the convenience of description, the same code|symbol is attached|subjected to the member which has the same function as the member demonstrated in the said embodiment, and the description is abbreviate|omitted.
[0063] (Structure of the semiconductor device 200 )
[0064] use Figure 5 and Image 6 The structure of the semiconductor device 300 of the present embodiment will be described. Figure 5 and Image 6 A top view and a side view of the semiconductor device 300 are shown. Furthermore, in Image 6 In the drawings, the conductive member 133 , the conductive member 134 , and the second terminal 204 are omitted from illustration.
[0065] like Figure 5As shown, the mounting structure of the package of the semiconductor device 300 is different from the mounting structure of the package of the semiconductor device 100 of the above-describe...
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