Check patentability & draft patents in minutes with Patsnap Eureka AI!

Method for Fabricating Single Photon Avalanche Diode Imaging Sensors

A diode and avalanche photoelectric technology, applied in photovoltaic power generation, semiconductor devices, electric solid-state devices, etc., can solve problems such as noise, poor performance of SPAD devices, and inability of SPAD devices to maintain electric fields

Active Publication Date: 2018-07-31
OMNIVISION TECH INC
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

These defects can render the SPAD device unable to maintain the required electric field
Additionally, SPAD devices with these deficiencies can be noisy and thus suffer from poor performance

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for Fabricating Single Photon Avalanche Diode Imaging Sensors
  • Method for Fabricating Single Photon Avalanche Diode Imaging Sensors
  • Method for Fabricating Single Photon Avalanche Diode Imaging Sensors

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0016] Examples of methods for fabricating an avalanche diode imaging sensor are described herein. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the described examples. One skilled in the relevant art will recognize, however, that the techniques described herein may be practiced without one or more of these specific details or may be practiced with other methods, components, materials, etc. In other instances, well-known structures, materials, or operations are not shown or described in detail to avoid obscuring certain aspects.

[0017] Reference throughout this specification to "one example" or "an embodiment" means that a particular feature, structure, or characteristic described in connection with the example is included in at least one embodiment of the present invention. Thus, appearances of the phrase "in one instance" or "in an embodiment" in various places throughout this specification are not ne...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The present application relates to a method of making a single photon avalanche diode imaging sensor. A method of making an avalanche photodiode pixel includes growing a second doped semiconductor layer on a first doped semiconductor layer having a first doping concentration. The second doped semiconductor layer is grown with a second doping concentration and has an opposite majority charge carrier type to the first doped semiconductor layer. A doped contact region having a third doping concentration is formed in the second doped semiconductor layer between the doped contact region and the first doped semiconductor layer. The doped contact region has the same majority charge carrier type as the second doped semiconductor layer. The third doping concentration is greater than the second doping concentration. A guard ring region is formed in the second doped semiconductor layer having a majority charge carrier type opposite to that of the second doped semiconductor layer and extending through the second doped semiconductor layer and surrounding the doped semiconductor layer contact area.

Description

[0001] Related Application Cross Reference [0002] The title of this application and the application filed on January 15, 2014 is "BACK SIDE ILLUMINATED SINGLE PHOTON AVALANCHEDIODE IMAGING SENSOR WITH HIGH SHORT WAVELENGTH DETECTION EFFICIENCY" and assigned to the assignee of the present application is related to pending application Ser. No. 14 / 156,053. technical field [0003] The present invention relates generally to photodiode fabrication, and in particular, but not exclusively, to avalanche photodiode image sensor fabrication. Background technique [0004] Image sensors have become obsolete. It is widely used in digital still cameras, cellular phones, security cameras, as well as in medical, automotive and other applications. Technologies for manufacturing image sensors have continued to develop rapidly. For example, demands for higher resolution and lower power consumption have driven further miniaturization and integration of these image sensors. [0005] One t...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/146
CPCH01L31/107H01L31/1892H01L27/1462H01L27/14621H01L27/14627H01L27/1463H01L27/14687H01L31/02027H01L27/14685Y02E10/50
Inventor 艾瑞克·A·G·韦伯斯特
Owner OMNIVISION TECH INC
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com