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Semiconductor device with termination mesa between field electrode structure unit field and termination structure

A termination structure, semiconductor technology, applied in semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve problems such as reducing the on-state resistance of devices

Active Publication Date: 2019-01-08
INFINEON TECH AUSTRIA AG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Higher dopant concentration in turn reduces the on-state resistance of the device

Method used

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  • Semiconductor device with termination mesa between field electrode structure unit field and termination structure
  • Semiconductor device with termination mesa between field electrode structure unit field and termination structure
  • Semiconductor device with termination mesa between field electrode structure unit field and termination structure

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Embodiment Construction

[0031] In the following detailed description, reference is made to the accompanying drawings, which form a part hereof, and in which are shown by way of illustrations specific embodiments in which the invention may be practiced. It is to be understood that other embodiments may be utilized and structural or logical changes may be made without departing from the scope of the present invention. For example, features illustrated or described with respect to one embodiment can be used on or in conjunction with other embodiments to yield yet a further embodiment. It is contemplated that the present invention includes such modifications and variations. The examples are described using specific language, which should not be construed as limiting the scope of the appending claims. The drawings are not necessarily to scale and are for illustrative purposes only. For the sake of clarity, the same elements have been designated by corresponding labels in the different figures, if not ot...

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Abstract

A semiconductor device includes a cell field with a plurality of field electrode structures and cell mesas. The field electrode structures are arranged in lines. The cell mesas separate neighboring ones of the field electrode structures from each other. Each field electrode structure includes a field electrode and a field dielectric separating the field electrode from a semiconductor body. A termination structure surrounds the cell field, extends from a first surface into the semiconductor body, and includes a termination electrode and a termination dielectric separating the termination electrode from the semiconductor body. The termination and field dielectrics have the same thickness. A termination mesa, which is wider than the cell mesas, separates the termination structure from the cell field.

Description

technical field [0001] The present invention relates to a semiconductor device having a termination mesa between a field electrode structure unit field and a termination structure. Background technique [0002] Power semiconductor devices based on IGFET (Insulated Gate Field Effect Transistor) cells are typically vertical devices with load current flow between a first surface on the front side and a second surface on the back side of the semiconductor die. In the blocking mode, the strip-shaped compensation structures extending from the front side into the semiconductor die deplete the semiconductor mesas formed between the strip-shaped compensation structures. The compensation structure allows higher dopant concentrations in the semiconductor mesas without adversely affecting blocking performance. Higher dopant concentrations in turn reduce the on-state resistance of the device. Typically, the termination structure shapes the ends of the semiconductor mesas at the edge of...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/78H01L29/739H01L21/331H01L21/336H01L29/06
CPCH01L29/7811H01L21/02233H01L21/02255H01L29/0638H01L29/0696H01L29/404H01L29/407H01L29/4236H01L29/66734H01L29/7393H01L29/7397H01L29/7813
Inventor D.拉福雷R.西米尼克
Owner INFINEON TECH AUSTRIA AG