Light-emitting diode crystal grain and its manufacturing method
A technology of light-emitting diodes and manufacturing methods, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of current concentration, low light-emitting efficiency of light-emitting diode crystal grains, and affect the light-emitting effect of light-emitting diode grains, so as to achieve the goal of improving light extraction efficiency Effect
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[0016] see figure 1 , the light emitting diode grain 10 of the present invention comprises a substrate 11, a first semiconductor layer 12 stacked upward from the substrate 11, an active layer 13, a second semiconductor layer 14 and a transparent conductive layer 19, a first electrode 15 and a second electrode 16 are respectively formed on the first semiconductor layer 12 and the transparent conductive layer 19 and located on opposite sides of the LED die 10 .
[0017] The material of the substrate 11 may be one of sapphire (Al2O3), silicon carbide (SiC), silicon (Si), gallium nitride (GaN) or zinc oxide (ZnO).
[0018] In this embodiment, the first semiconductor layer 12 is an N-type semiconductor layer. One side of the upper surface of the first semiconductor layer 12 away from the substrate 11 is exposed, and the opposite side is covered by the active layer 13 , thereby forming an exposed first region 1211 and a covered second region 1212 . The active layer 13 and the seco...
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