Cleaning Efficiency Detecting Method of Cleaning Unit
A technology of cleaning efficiency and width, which is applied in the field of cleaning efficiency detection of cleaning units, can solve problems such as small width of source line 10, decline in product yield, and impact on products, so as to achieve accurate judgment of cleaning efficiency and avoid measurement errors. simple effect
Active Publication Date: 2018-02-16
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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Problems solved by technology
[0010] Since the profile of the source line 10 is a structure with a wide top and a narrow bottom, the etching process of the source line 10 will affect the top width of the source line 10
[0011] However, in the prior art, the problem that the width of the source line 10 is too small due to the abnormality of the megasonic cleaning unit often occurs, which affects the electrical performance of the product and reduces the product yield.
At present, there is no effective method to detect the cleaning efficiency of the cleaning unit, so that problems cannot be found in time. Once an abnormality occurs, it will affect a large number of products
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[0029] As mentioned in the background art, since the prior art cannot detect the cleaning efficiency of the CMP cleaning unit, once the cleaning efficiency of the cleaning unit decreases or abnormality occurs, a large number of products will be affected, resulting in a decrease in product yield.
[0030] Studies have found that under normal temperature conditions, a uniform natural oxide layer will form on the surface of polysilicon in the air, and will soon reach a "saturation" state, and the thickness of the natural oxide layer will no longer increase. Since there is a high etching selectivity ratio between polysilicon and silicon oxide in the subsequent etching process, the thickness of the natural oxide layer formed on the surface of polysilicon has a great influence on the etching process. Since the section of the polysilicon source line is a structure with a wide top and a narrow bottom, when the oxide layer is thin, the amount of polysilicon etching is large, and the sur...
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The invention discloses a cleaning efficiency detecting method for a cleaning unit, comprising a plurality of batches of substrates. A groove is formed in the surface of the substrate, and the width of the top of the groove is greater than the width of the bottom of the groove. The processing performed on the substrates of various batches comprises steps of forming a polycrystalline silicon material layer covering a substrate and filling in the groove, performing chemical machinery grinding on the polycrystalline silicon material layer to perform a polycrystalline silicon layer flushed with the surface of the substrate, performing measurement on the width of the grinded polycrystalline silicon surface to obtain a first width, adopting a cleaning unit to perform cleaning on the surface of the polycrystalline silicon layer, etching the polycrystalline silicon layer to enable the width of the top of the polycrystalline silicon layer to be reduced, performing measurement on the width of etched the polycrystalline silicon surface to obtain a second width, performing successive comparison on the difference between the first width and the second width which are corresponding to the substrate of each batch according to the cleaning order after the said processing, and determining whether the cleaning efficiency of the cleaning unit is declined according to the change of the difference. The invention can realize the detection on the cleaning efficiency of the cleaning unit.
Description
technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for detecting cleaning efficiency of a cleaning unit. Background technique [0002] In order to overcome the shortcomings of traditional chemical polishing and mechanical polishing and absorb their advantages, people have proposed to combine chemical and mechanical effects, which is called chemical mechanical polishing (CMP). CMP is the most widely used at present, and it is an effective ultra-precision machining method to obtain a planar layer without surface damage. [0003] The equipment and consumables used in CMP technology include: grinding machine, grinding liquid, grinding pad, post-CMP cleaning equipment, grinding end detection and process control equipment, waste treatment and testing equipment, etc. An important process of completing the CMP process is cleaning. After grinding the surface of the abrasive material layer, there will be residual abrasive ...
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IPC IPC(8): H01L21/66
CPCH01L22/12H01L22/20
Inventor 秦海燕李儒兴程君
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP