A method of low power consumption and rapid synthesis of sic powder

Abstract

The invention provides a low-power-consumption method for quickly synthesizing SiC powder. The enhancement of the Si powder proportion and the addition of the SiO2 prevent the existence of excess C powder; after the SiO2 reacts, abundant heat is generated; as CO is emitted, the carrying heat promotes the Si+C powder reaction and promotes self-propagation, thereby saving abundant power, and accelerating the reaction; and the columnar block is pressed, thereby reducing the reaction between the powder and crucible side wall.

Description

technical field [0001] The invention relates to a method for quickly synthesizing SiC powder with low power consumption and belongs to the technical field of crystal growth. Background technique [0002] As a representative of the third-generation wide-bandgap semiconductor material, silicon carbide has excellent electrical and thermal properties such as large bandgap, high mobility, and high thermal conductivity. It has become an ideal material for making high-frequency, high-power, high-temperature-resistant and radiation-resistant devices. . In terms of device development, SiC blue LEDs have been commercialized; the research and development of SiC power devices has become the mainstream of research and development of new power semiconductor devices; in terms of high-temperature semiconductor devices, SiC JFETs and SiC devices made of SiC materials can be used It works normally at a high temperature of 600°C without any cooling system. With the further development of sil...

AI Technical Summary

Problems solved by technology

However, the SiC powder synthesized by the self-propagating method and the Acheson method widely used now can meet the requirements of industrial SiC powder, but there are problems such as high impurity concentration, powder agglomeration, and residual Si simple substance, etc. The electrical properties and crystal quality of the grown crystal have an important influence

However, although the organic synthesis method can obtain high-purity powder with a powder purity and impurity content below 1ppm, the follow-up process is complicated and the collection of fine powder is difficult, so it is not suitable for mass production.

[0004] Chinese patent document 200810016665.6 discloses an artificial synthesis method for high-purity silicon carbide powder for semiconductor single crystal growth. This method adopts a secondary synthesis process to obtain high-purity silicon carbide powder for semiconductor single crystal growth, but two The secondary synthesis process is complex and time-consuming, and impurities will be artificially introduced during the synthesis process

[0010] Since this reaction is a weakly exothermic reaction, continuous heating is required to ensure the heat required for the continuation of the reaction, which will lead to a waste of power resources to a certain extent.

Images