Threshold voltage self-compensating rf-dc converter based on cmos technology

Abstract

The invention discloses a threshold voltage self-compensating RF-DC converter based on a CMOS technology. The circuit level number of the converter is N, and the converter is of an M level-cross circuit structure. Firstly, a circuit uses an MOS tube under a standard CMOS technology, so that the circuit can be integrated with other circuit modules, and miniaturization and integration of the circuit can be realized; and secondly, the RF-DC converter uses a threshold voltage self-compensating technology, and the threshold voltages of conversion components are effectively reduced, so that the RF-DC converter can receive low-power RF energy. The threshold voltage compensation of the conversion components is realized through the polarization of the grid electrode of an NMOS connected at a post level higher potential and the polarization of the grid electrode of a PMOS connected at a previous level lower potential.

Description

technical field [0001] The invention relates to the field of radio frequency energy collection, in particular to an RF-DC converter based on CMOS process threshold voltage self-compensation. Background technique [0002] Energy harvesting is a key technology for realizing low-power devices, wireless sensor nodes, and implantable devices that are long-term maintenance-free. Energy harvesting is to capture excess energy in the environment, such as temperature, light, kinetic energy and RF energy, etc., and convert this energy into DC voltage for low-power devices, wireless sensor nodes, and implanted devices. Among these environmental energies, RF energy has unique advantages. First, it can have a wide range of RF energy sources, including mobile phones, base stations, WIFI, TV broadcasting stations, etc. Second, when the receiving end and the RF energy source are far away, the RF energy is still can be transmitted. In real life, the number of RF energy sources is very large...

AI Technical Summary

Problems solved by technology

In the manufacturing process of Schottky diodes and low-threshold MOS tubes, additional processes are required to complete, and the process flow is not compatible with standard CMOS processes. Therefore, Schottky diodes or low-threshold MOS tubes are used as conversion devices. The converter cannot be integrated with the circuit manufactured by the standard CMOS process, which is not conducive to the miniaturization and integration of the circuit

[0005] 2. The converter using a standard CMOS device as the conversion device itself is limited by its threshold voltage, so that the converter cannot receive low-power RF energy, which limits the scope of use of the RF energy receiver

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