Formation method of semiconductor structure

Abstract

The invention provides a formation method of a semiconductor structure. The method includes the following steps that: a substrate is provided, a plurality of active regions are arranged in the substrate, and isolation structures are arranged between adjacent active regions, the substrate surfaces of a part of the active regions are provided with gate structures, two sides of each gate structure are respectively provided with a source region and a drain region; a first dielectric layer is formed on the surfaces of the active regions, the isolation structures and the gate structures; the first dielectric layer on the isolation structures is removed, initial through holes are formed in the first dielectric layer; a protective layer is formed on the surfaces of the side walls of the initial through holes; after the first dielectric layer at the bottoms of the initial through holes is removed, first through holes are formed in the first dielectric layer; a second dielectric layer is formed in the first through holes; after the first dielectric layer is removed, a second through hole and a source line trench are formed at two sides of each gate structure respectively; and drain conductive structures are formed in the second through holes, and source line conductive structures are formed in the source line trenches. The semiconductor structure formed by adopting the method has a beautiful appearance and stable performance.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for forming a semiconductor structure. Background technique [0002] In the current semiconductor industry, integrated circuit products can be mainly divided into three types: analog circuits, digital circuits and digital / analog hybrid circuits, among which storage devices are an important type of digital circuits. In recent years, among storage devices, flash memory (flash memory) has developed particularly rapidly. The main feature of flash memory is that it can keep stored information for a long time without power on, so it is widely used in various memories that urgently need to store data that will not disappear due to power interruption, and that require repeated reading and writing of data. Moreover, flash memory has the advantages of high integration, fast access speed, easy erasing and rewriting, etc., so it has been widely used in many fiel...

AI Technical Summary

Problems solved by technology

[0005] However, even if a self-aligned electrical contact process is used to make the conductive structure on the surface of the source region or the drain region, the formed flash memory still has poor performance, poor stability and reliability

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