31results about How to "Good sidewall morphology" patented technology

A formation method of a semiconductor device includes providing a substrate having a to-be-etched layer including a graph dense zone and a graph sparse zone; forming a first mask layer having sparse images on the surface of the graph sparse zone of the to-be-etched layer; forming a photo-etching layer covering the surface of the to-be-etched layer and the surface of the first mask layer; performing exposure development on the photo-etching layer and forming a second mask layer having dense images on the image dense zone of the to-be-etched layer and the surface of the first mask layer; etching the graph dense zone of to-be-etched layer by taking the second mask layer as a mask and etching the graph sparse zone of the to-be-etched layer by taking the second mask layer and the first mask layer as the mask until the surface of the substrate is exposed. By adopting the invention, problems caused by load effect during an etching process can be solved, so that the etching layer formed after the etching process of the graph sparse zone has a good appearance.

The invention discloses a forming method of a resistance-type random access memory. The forming method comprises the following steps: using a hard mask layer with an opening as a mask, etching a top electrode layer with a first dry method etching technology until the surface of a dielectric material layer is exposed, wherein etching gas of the first dry method etching technology is CH4; continuously using the hard mask layer with the opening as the mask, etching the dielectric material layer with a second dry method etching technology until the surface of a bottom electrode layer is exposed, wherein etching gas of the second dry method etching technology is H2. According to the forming method, the etching technologies are prevented from causing etching pollution on the top electrode layer and the dielectric material layer, so that the side wall of the top electrode layer and the side wall of the dielectric material layer after etching are clean, and then the electrical property of the formed resistance-type random access memory is improved.

The invention provides a formation method of a semiconductor structure. The method includes the following steps that: a substrate is provided, a plurality of active regions are arranged in the substrate, and isolation structures are arranged between adjacent active regions, the substrate surfaces of a part of the active regions are provided with gate structures, two sides of each gate structure are respectively provided with a source region and a drain region; a first dielectric layer is formed on the surfaces of the active regions, the isolation structures and the gate structures; the first dielectric layer on the isolation structures is removed, initial through holes are formed in the first dielectric layer; a protective layer is formed on the surfaces of the side walls of the initial through holes; after the first dielectric layer at the bottoms of the initial through holes is removed, first through holes are formed in the first dielectric layer; a second dielectric layer is formed in the first through holes; after the first dielectric layer is removed, a second through hole and a source line trench are formed at two sides of each gate structure respectively; and drain conductive structures are formed in the second through holes, and source line conductive structures are formed in the source line trenches. The semiconductor structure formed by adopting the method has a beautiful appearance and stable performance.

A self-aligned double patterning formation method comprises the steps of providing a material layer to be etched, forming a sacrificial photoresist layer on the material layer to be etched, forming a polymer layer on the surfaces of the top and the side walls of the sacrificial photoresist layer, forming a first mask material layer on the surface of the polymer layer, and back-etching the first mask material layer to enable the first mask material layer on the two sides of the sacrificial photoresist layer to form a first mask pattern. As the polymer layer is formed on the surfaces of the top and the side walls of the sacrificial photoresist layer, and the hardness of the polymer layer is far higher than that of the sacrificial photoresist layer, the shape of the sacrificial photoresist layer does not deform due to stress generated by the first mask material layer. Moreover, the rotation angle of the polymer layer formed by the use of a deposition process and an etching process is a right angle, which enables the sidewall morphology of the final etched pattern to be good.