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Method for manufacturing metal nanowire, semiconductor device, and method for manufacturing same

A technology of metal nanowires and manufacturing methods, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, semiconductor/solid-state device components, etc. Equal problem, to achieve the effect of guaranteed performance, good side wall morphology, high thickness uniformity

Active Publication Date: 2019-12-13
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Among the many 1D nanostructures, metal nanowires have attracted widespread attention and can be used as interconnect structures in electronic, optical, and nanosensor devices, but the fabrication methods of metal nanowires used as interconnect structures are still unclear. There are defects such as poor nanowire morphology and uneven thickness, which seriously affect the electrical performance and yield of the final semiconductor device.

Method used

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  • Method for manufacturing metal nanowire, semiconductor device, and method for manufacturing same
  • Method for manufacturing metal nanowire, semiconductor device, and method for manufacturing same
  • Method for manufacturing metal nanowire, semiconductor device, and method for manufacturing same

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Embodiment Construction

[0051] Please refer to 1A to 1E , a known method of manufacturing a semiconductor device with metal nanowires, comprising the steps of:

[0052] First, please refer to Figure 1A On a semiconductor substrate 100, the bottom anti-reflection layer (for example, SiCN) 101 and the core layer are sequentially covered, and the core layer is patterned through processes such as photoresist coating, exposure, and development to form a patterned core layer. nuclear layer 102;

[0053] Then, please continue to refer to Figure 1A , using a deposition process of materials such as Ru to cover the surface of the patterned core layer 102 and the etching stop layer 101 with a metal layer 103, and the deposition thickness of the metal layer 103 in each region is basically the same;

[0054] Next, please refer to Figure 1B , using an anisotropic metal etching process to etch the metal layer until the top surface of the patterned core layer 102 and the top surface of the etch stop layer 101...

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Abstract

The invention provides a method for manufacturing a metal nanowire, a semiconductor device, and a method for manufacturing the same. After a patterned core layer and the surface of a semiconductor substrate are covered with a metal layer, a spacer is formed on the sidewall of the metal layer. Then, under the protection of the spacer, the metal layer on the top surface of the patterned core layer and the surface of the semiconductor substrate outside the spacer is removed, thereby forming an L-shaped metal nanowire sandwiched between the patterned core layer and the spacer. The metal nanowire has a good sidewall shape and high thickness uniformity, which can improve device performance and a product yield.

Description

technical field [0001] The invention relates to the technical field of integrated circuit manufacturing, in particular to a method for manufacturing metal nanowires, a semiconductor device and a method for manufacturing the same. Background technique [0002] With the rapid development of nanotechnology and the increasing demand for device size miniaturization and functional integration, it is the future development trend to manufacture nanodevices with more complex structures and smaller components. The interconnection technology of nanomaterials is a bridge from nanomaterials to nanodevices, and it is one of the inevitable foundations to promote the large-scale application of nanomaterials. A nanostructure is a structure with at least one dimension (1D) at the nanoscale (1 to 100 nanometers). Among the many 1D nanostructures, metal nanowires have attracted widespread attention and can be used as interconnect structures in electronic, optical, and nanosensor devices, but t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/768H01L23/538B82Y40/00
CPCB82Y40/00H01L21/76895H01L23/5386
Inventor 张海洋蒋鑫钟伯琛
Owner SEMICON MFG INT (SHANGHAI) CORP
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