The present invention provides a method for forming a metal interconnection structure, comprising: first providing a substrate on which a gate structure, a first dielectric layer and a first plug are formed, and then forming a metal interconnection line and hard mask layer, then etch the hard mask layer and a partial thickness of the first dielectric layer to form grooves, and perform at least two wet cleaning processes on the surface of the grooves and the metal interconnection lines, and then deposit second dielectric layer, so that an air gap is formed in the second dielectric layer in the trench, and finally a second plug is formed in the second dielectric layer, wherein the first plug, the metal interconnection line and the second plug form a metal interconnection structure. Before forming the second dielectric layer, multiple wet cleaning processes are performed on the surface of the groove and the metal interconnection to remove high polymer impurities, so that the gap between the metal interconnection and the subsequently formed second dielectric layer is The stress between them is more balanced, thereby avoiding the risk of the second plug protruding and breaking due to extrusion.