Semiconductor device forming method

Abstract

A semiconductor device forming method includes providing a semiconductor substrate, forming a first mask layer on the semiconductor substrate, forming a first groove penetrating the first mask layer for a part of thickness, filling the first groove with a first hard mask layer, forming a second groove penetrating the first hard mask layer for the thickness of the first hard mask layer; utilizing the first hard mask layer as a mask to etch the first mask layer and the semiconductor substrate till a through hole or a groove is formed in the semiconductor substrate. By means of the semiconductor device forming method, only one etching process is required in formation of the through hole or the groove through a double graph technology, double graph forming process difficulty and manufacture cost are reduced, and the semiconductor device forming cost is further reduced.

Description

technical field

[0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for forming a semiconductor device. Background technique

[0002] In order to integrate more and smaller transistors on a chip, new photolithography techniques must be developed to continuously reduce the size of transistors.

[0003] One direction of development in lithography is to fundamentally shorten the wavelength of light used in optical lithography. The current lithography technology is committed to the development of extreme ultraviolet (EUV) lithography technology with a wavelength of 13.5nm. Using EUV lithography technology may result in chips with feature sizes smaller than 32nm. Chips using EUV lithography will end up being 100 times faster and have 100 times more storage than even the most processing-capable chips available today. However, there are still many problems in the current EUV lithography technology that have not been resol...

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