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Preparation method of novel zinc oxide material

A new type of zinc oxide technology, applied in the field of preparation of new zinc oxide materials, can solve the problems of high replacement cost of preparation process, complicated preparation process and the like

Inactive Publication Date: 2020-06-09
GUANGZHOU SPECIAL PRESSURE EQUIP INSPECTION & RES INST
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] ZnO nanostructures are also used in many commercial products currently available in the consumer market. The physicochemical, structural and morphological characteristics of ZnO nanostructures mainly depend on their synthesis process. Previously, there have been related fabrication techniques such as nanoparticle , nanorods, nanowires, nanoribbons, nanotubes, nanosheets, and nanospheres, as well as hierarchical structures constructed from low-dimensional nanomaterials, such as flower-like structures assembled from nanosheets, Mn-doped ZnO nanospheres, The three-dimensional structure of nanosheet assembly, etc., but the preparation of various ZnO nanostructures adopts their own methods, but the same method of preparing ZnO nanostructures is different, making the preparation process of its crystals too complicated, especially when it is necessary to change the crystal structure. , the replacement cost of the preparation process is relatively large

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  • Preparation method of novel zinc oxide material
  • Preparation method of novel zinc oxide material
  • Preparation method of novel zinc oxide material

Examples

Experimental program
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Embodiment 1

[0034] This embodiment provides a method for preparing a novel zinc oxide material, the method steps are as follows:

[0035] S1: Take the sapphire substrate as the growth substrate, and clean it; in this embodiment, in order to effectively remove the oil stain on the surface of the substrate, it is successively ultrasonicated through acetone, isopropanol, anhydrous formaldehyde, and deionized water. After cleaning, blow dry with nitrogen gas for later use;

[0036] S2: Select ZnO as the target material, adopt pulsed laser deposition technology, feed oxygen flow, and control the growth at a specific temperature for a period of time, after the growth is completed, naturally cool to room temperature, and then obtain the ZnO seed layer; in this embodiment Among them, a 248nm KrF excimer laser is used as the laser source, the working frequency is 2HZ, the laser energy is 300mJ, ZnO is used as the target material, sapphire is used as the substrate, and the background vacuum is set ...

Embodiment 2

[0043] This example provides another preparation method of a new type of zinc oxide material, aiming to explore the influence of different precursor concentrations on the morphology of ZnO. On the basis of the above embodiments, a 200nm thick sapphire substrate is selected, and a ZnO seed layer is grown on the substrate. In order to explore the effect of different precursor concentrations on the morphology of ZnO, the reaction temperature in S3 and S4 was set at 95 °C, the reaction time was set at 5 h and the zinc acetate (Zn(CH 3 COO) 2 2H 2 O) and HMTA configuration concentration ratio of 1:1, the ZnO nanomaterial morphology was observed when the concentration of zinc acetate was 6.25 mM, 15 mM, 25 mM and 30 mM, respectively, as figure 1 As described in (a)1-(d)1, as the precursor concentration increased from 6.25 mM to 30 mM, the thickness of a film grown on the seed layer increased from 1 µm to 4.8 µm, but continued to increase When the precursor concentration is lowere...

Embodiment 3

[0046] This example provides another preparation method of a new type of zinc oxide material, aiming to explore the influence of different reaction times on the morphology of ZnO. On the basis of the above examples, in order to explore the influence of different reaction times on the morphology of ZnO, the concentration of zinc acetate in S3 and S4 was configured as 20 mM, and when the reaction temperature was set at 95°C, the reaction times were 5h, 6h, At 8h and 10h, the shape and aspect ratio of ZnO nanorods were observed. Such as figure 2 As shown in (a), when the reaction time is 5 h, the nanorods are hourglass-shaped with a short size and a length of about 9 μm, and the shape of the nanorod tip is irregular; as figure 2 As shown in (b), when the reaction time is 6 h, the ZnO nanorods are regular-shaped nanostyles, the length increases to 11 μm, and the diameter is uniformly 1 μm, and the top of the nanorods turns into a typical ZnO hexagonal prism shape, and the diame...

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Abstract

The invention discloses a preparation method of a novel zinc oxide material, which comprises the following steps: taking a sapphire substrate as a growth substrate, and cleaning the growth substrate;selecting ZnO as a target material, introducing oxygen flow by adopting a pulse laser deposition technology, controlling growth for a period of time at a specific temperature, and naturally cooling toroom temperature after the growth is finished, so as to obtain a ZnO seed crystal layer; weighing a certain amount of zinc acetate (Zn(CH3COO)2.2H2O) and hexamethylenetetramine (HMTA) according to aconcentration ratio of 1: 1, and fully dissolving the zinc acetate (Zn(CH3COO)2.2H2O) and hexamethylenetetramine (HMTA) to prepare a reaction solution; putting the ZnO seed crystal layer substrate into a polytetrafluoroethylene reaction kettle, pouring the prepared reaction liquid, sealing the reaction kettle, putting the reaction kettle into a constant-temperature drying box, and setting certainreaction time and reaction temperature to enable the ZnO seed crystal layer substrate to grow in the aqueous solution; and observing the shape of the ZnO nano material by controlling different precursor concentrations, reaction time and temperatures. The precursor concentration, the reaction time and the temperature in the method can obviously influence the growth process of the zinc oxide nanorod.

Description

technical field [0001] The invention relates to the technical field of zinc oxide preparation, in particular to a preparation method of a novel zinc oxide material. Background technique [0002] Zinc oxide (ZnO) is a II-VI wide bandgap semiconductor material with a bandgap width of 3.37eV at room temperature, a corresponding response wavelength of around 380nm, and an exciton binding energy as high as 60meV, which enables ZnO to also undergo exciton absorption at room temperature. and recombination, and its optical gain coefficient is as high as 300cm-1. Due to the small size of ZnO, simple preparation, narrow response band, and high sensitivity, ZnO has quickly become a hot spot in international research, and nano-scale ZnO has more excellent properties. , such as piezoelectric effect, near-ultraviolet photoelectric effect, biocompatibility, transparent conductive phenomenon, etc., can be applied in the fields of piezoelectric materials, ultraviolet excitation detection, so...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01G9/02B82Y40/00C23C14/08C23C14/28C30B29/16C30B29/60C30B7/14
CPCC01G9/02B82Y40/00C23C14/086C23C14/28C30B29/16C30B29/60C30B7/14C01P2004/16C01P2004/50C01P2004/24C01P2004/32C01P2004/45
Inventor 黄国家郭华超杨波文芳张双红翟伟李茂东尹宗杰利观宝
Owner GUANGZHOU SPECIAL PRESSURE EQUIP INSPECTION & RES INST
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