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Formation method of resistive random access memory

A resistive random and memory technology, applied in the direction of electrical components, etc., can solve the problem of etching pollution on the side wall of the upper electrode layer, and achieve the effect of avoiding etching pollution and improving electrical performance

Active Publication Date: 2018-12-21
SEMICON MFG INT (SHANGHAI) CORP
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  • Abstract
  • Description
  • Claims
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Problems solved by technology

[0005] The problem solved by the present invention is to provide a method for forming a resistive random access memory, which solves the problem of etching pollution on the sidewall of the upper electrode layer caused by the etching process, thereby improving the electrical performance of the resistive random access memory

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  • Formation method of resistive random access memory

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Embodiment Construction

[0027] It can be seen from the background art that the electrical performance of the resistive random access memory formed in the prior art needs to be improved.

[0028] It has been found through research that in the prior art, after the upper electrode layer covering the surface of the dielectric material layer is formed, the method of physical sputtering bombardment is usually used to pattern the upper electrode layer and the dielectric material layer. The physical sputtering The bombardment source is Ar plasma, and openings are formed in the upper electrode layer and the dielectric material layer under the Ar plasma bombardment. However, due to the physical sputtering bombardment, the metal ions or metal ion groups of the upper electrode layer are separated from the upper electrode layer, and the medium ions or medium ion groups of the dielectric material layer are separated from the dielectric material layer; There is a lack of fluidity in the etching chamber, and it is d...

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Abstract

The invention discloses a forming method of a resistance-type random access memory. The forming method comprises the following steps: using a hard mask layer with an opening as a mask, etching a top electrode layer with a first dry method etching technology until the surface of a dielectric material layer is exposed, wherein etching gas of the first dry method etching technology is CH4; continuously using the hard mask layer with the opening as the mask, etching the dielectric material layer with a second dry method etching technology until the surface of a bottom electrode layer is exposed, wherein etching gas of the second dry method etching technology is H2. According to the forming method, the etching technologies are prevented from causing etching pollution on the top electrode layer and the dielectric material layer, so that the side wall of the top electrode layer and the side wall of the dielectric material layer after etching are clean, and then the electrical property of the formed resistance-type random access memory is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for forming a resistive random access memory. Background technique [0002] Non-volatile memory has the advantage of maintaining data information even when there is no power supply. It plays a very important role in the field of information storage and is also one of the current research hotspots in information storage technology. However, today's mainstream non-volatile memory flash memory (flash) has problems such as high operating voltage, slow speed, and poor endurance. Resistive random access memory (RRAM, Resistance Random Access Memory) has shown the advantages of fast working speed, high storage density, long data retention time, and strong endurance, and is a strong candidate for the next generation of semiconductor memory. [0003] The basic storage unit of the RRAM includes a metal-insulation-metal (MIM, Metal-insulation-Metal) structural ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L45/00
Inventor 张海洋刘盼盼
Owner SEMICON MFG INT (SHANGHAI) CORP
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