Substrate processing system and substrate cleaning apparatus

Abstract

This invention provides a substrate processing system that enables foreign matter adhered to a rear surface or a periphery of a substrate to be completely removed. A processing assembly (15) of a substrate cleaning apparatus of the substrate processing system (10) including: a chamber (38) for accepting a wafer (W); a holding table (39) configured at the bottom of the chamber (38) and for placing the wafer W; a spray head configured at the top in the chamber (38) and opposite to the holding table (39).The holding table (39) jets the mixed cleaning agent of cleaning substrate (such as pure water) and inactive gas (such as N2) in two phases of a gas phase and a liquid phase at the back side or edge part facing to the wafer (W). The spray head (40) generates the down-flow facing to the surface of the wafer (W).

Description

technical field [0001] The present invention relates to a substrate processing system and a substrate cleaning device, and relates to a substrate processing system including a substrate cleaning device for removing foreign matter adhering to a back surface or a peripheral portion of a substrate. Background technique [0002] Generally, in a substrate processing apparatus that performs predetermined processing on a semiconductor wafer (hereinafter simply referred to as a "wafer") as a substrate, metal flakes (for example, aluminum metal flakes) or Reaction products (such as polymers of fluorocarbons) caused by the reaction of the process gas, etc. These foreign substances (particles) adhere to the wafer, deteriorating the quality of semiconductor devices formed on the surface of the wafer. [0003] As a method for removing particles adhering to a wafer, there is known a wet cleaning method in which an etched wafer is washed with hydrofluoric acid solution or pure water in a ...

AI Technical Summary

Problems solved by technology

As a result, there is a problem that the quality of semiconductor devices manufactured based on the wafer is lowered.

[0007] In addition, the wafers to be etched are transported in an airtight container (such as a front opening unified container (FOUP: wafer transfer box)) that holds a plurality of wafers parallel to each other. However, foreign objects (particles, polymers, etc.) ) is peeled off from the back surface or peripheral portion of the upper wafer, lands on the surface of the lower wafer and adheres thereto, degrading the quality of semiconductor devices manufactured based on the lower wafer

[0008] In addition, with the method of immersing a plurality of wafers in the above-mentioned cleaning tank, not only the particles on the surface of the wafers but also the particles on the back of the wafers and the inclined polymer on the peripheral portion of the wafers can be removed, but since the removed particles remain in the cleaning tank, In the liquid, the particles may reattach to the wafer (cross-contamination), reducing the quality of semiconductor devices

[0009] In addition, in the above-mentioned wet cleaning method, even if it is assumed that the particles and inclined polymers on the back surface of the wafer are removed, since the flow of pure water for wet cleaning cannot be controlled, the removed particles and the like are adjacent to the wafer being wet-cleaned, for example, it is possible Re-adhesion to the wafer surface that is wet-cleaned at the same time, deteriorating the quality of semiconductor devices

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