Formation method of resistive random access memory

Abstract

The invention provides a forming method of a resistive random-access memory. The method comprises the steps as follows: a substrate is provided; a lower electrode layer is arranged in the substrate; the top part of the lower electrode layer is flush with the surface of the substrate; a dielectric material layer is formed on the surface of the substrate; an upper electrode layer is formed on the surface of the dielectric material layer; a hard mask layer is formed on the surface of the upper electrode layer; the hard mask layer is patterned; an opening for exposing the upper electrode layer is formed in the hard mark layer; with the hard mask layer with the opening as a mask, the upper electrode layer and the dielectric material layer are sequentially etched by a dry etching process until the surface of the substrate is exposed; an etching gas for the dry etching process is H2; the hard mask layer with the opening is removed. The etching pollution to the upper electrode layer and the dielectric material layer caused by the etching process is avoided; and the side wall of the etched upper electrode layer and the side wall of the dielectric material layer are clean, so that the electrical properties of the formed resistive random-access memory are improved.

Description

technical field [0001] The invention relates to the technology in the field of semiconductor manufacturing, in particular to a method for forming a resistive random access memory. Background technique [0002] Non-volatile memory has the advantage of maintaining data information even when there is no power supply. It plays a very important role in the field of information storage and is also one of the current research hotspots in information storage technology. However, today's mainstream non-volatile memory flash memory (flash) has problems such as high operating voltage, slow speed, and poor endurance. Resistive random access memory (RRAM, Resistance Random Access Memory) has shown the advantages of fast working speed, high storage density, long data retention time, and strong endurance, and is a strong candidate for the next generation of semiconductor memory. [0003] The basic storage unit of the RRAM includes a metal-insulation-metal (MIM, Metal-insulation-Metal) str...

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Problems solved by technology

[0005] The problem solved by the present invention is to provide a method for forming a resistive random access memory, which solves the problem of etching pollution on the sidewall of the upper electrode layer caused by the etching process, thereby improving the electrical performance of the resistive random access memory

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