Super junction and manufacturing method thereof, and deep trench manufacturing method of super function

Abstract

The invention provides a super junction and a manufacturing method thereof, and a deep trench manufacturing method of the super function. In the deep trench manufacturing method of the super function,a mask layer formed on a substrate or formed on an epitaxial layer of the substrate is subjected to etching through high-molecular polymer gas to form a hard mask plate, the substrate or the epitaxial layer formed on the substrate is etched step by step through the hard mask plate under stepped increasing gas pressure, and thus, a deep trench is formed on the substrate or the epitaxial formed onthe substrate. By the deep trench manufacturing method provided by the invention, the deep trench with relatively good characteristic size uniformity, depth uniformity and angle uniformity can be formed.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a super junction and a manufacturing method thereof, and a method for manufacturing a deep trench of a super junction. Background technique [0002] A super junction is a semiconductor structure composed of a series of alternately arranged P-type semiconductor layers and N-type semiconductor layers. The alternately arranged P-type semiconductor layers are also called P-type columns, and the N-type semiconductor layers are also called N-type columns. When fabricating a super junction device through a deep trench (Deep Trench) process, the morphology of the deep trench is very important. However, due to the limitations of the etching process, the generally obtainable deep trench morphology is poor. When the trench is shallow, the influence is small, but when the width of the trench, that is, the corresponding critical dimension (CD, Critical Dimension) is smal...

AI Technical Summary

Problems solved by technology

[0004] 2. At the bottom of the same deep trench 11, the phenomenon of different etching depths and inclination angles is caused, such as image 3 Shown in the dotted line box 32 area;

[0007] The above defects seriously affect the uniformity of the morphology of deep trenches

Due to the deterioration of the uniformity and morphology of deep trenches, the time and difficulty of epitaxial filling (EPI Filling) are greatly increased, which has a great impact on equipment capability and production capacity

The deep trenches formed by the above methods affect the stability and reliability of the formed superjunction devices

Images