Integrated optical metrology and lithographic process system for dynamic critical dimension control

Abstract

A method and apparatus for improving a yield and throughput of a lithographic process track, the method including providing a first resist layer on a first process wafer; forming a first resist pattern in the first resist layer including a heating process according to a first temperature profile wherein the heating process comprises a plurality of temperature controllable heating zones; producing and collecting scattered light spectra from the first resist pattern processing the scattered light spectrum to obtain 3-dimensional information including first resist pattern critical dimensions; determining a second temperature profile for performing the heating process to achieve targeted resist pattern critical dimensions including a second resist pattern on a second process wafer; and, forming the second resist pattern dimensions including the heating process according to the second temperature profile.

Description

technical field [0001] The present invention relates to a lithography process, in particular to a treatment method for photoresist baking and development in the integrated circuit production process. The treatment method includes integrating a temperature control device and an optical measurement system. A method is used to adjust the photoresist baking process to improve the critical-dimension (CD) in the lithography process and control the uniformity of the feature size to increase the throughput of the wafer. Background technique [0002] Due to the rapid development of semiconductor elements, the size of semiconductor elements continues to shrink, making the size of semiconductor wafers smaller and smaller, and effectively increasing the density of semiconductor elements. As the size of semiconductors continues to shrink and develop towards high density, the limiting factor gradually changes to the need to improve the accuracy of the lithographic patterning process and t...

AI Technical Summary

Problems solved by technology

[0007] It can be seen that the lithography process of the above-mentioned existing semiconductor elements obviously still has inconvenience and defects in the manufacturing method and use, and needs to be further improved urgently.

In order to solve the problems existing in the lithography process of the existing semiconductor components, the relevant manufacturers have tried their best to find a solution, but no suitable design has been developed for a long time, and there is no suitable structure for general products. To solve the above problems, this is obviously a problem that the relevant industry is eager to solve

Images