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External resonator type light emitting device

A technology of external resonators and light-emitting devices, applied in the structure of optical resonators, instruments, optics, etc., can solve problems such as changes in light intensity, achieve the effects of suppressing mode hopping, improving wavelength stability, and suppressing changes in light intensity

Active Publication Date: 2020-01-07
NGK INSULATORS LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, since this FP laser oscillates at the wavelength at which the standing wave condition is established, the longitudinal mode tends to become multi-mode. In particular, when the current or temperature changes, the oscillation wavelength changes, thereby changing the light intensity.

Method used

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  • External resonator type light emitting device
  • External resonator type light emitting device
  • External resonator type light emitting device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0174] made as Figure 1 ~ Figure 3 device shown.

[0175] Specifically, a Ti film is formed on a substrate obtained by z-cutting MgO-doped lithium niobate crystals, and a grating pattern is fabricated in the y-axis direction by photolithography. Afterwards, using the Ti pattern as a mask, fluorine-based reactive ion etching was used to form b100μm grating groove. The groove depth of the grating is 300nm. In addition, in order to form an optical waveguide propagating in the y-axis, the grating portion was subjected to groove processing with a width Wm of 3 μm and a Tr of 0.5 μm using an excimer laser. Further, a sputtering device was used to form SiO 2 The buffer layer 17 is constituted by using a black LN substrate as a support substrate and bonding the grating formation surface.

[0176] Next, the black LN substrate side was attached to a polishing table, and the rear surface of the LN substrate on which the grating was formed was precisely polished to a thickness (Ts) ...

Embodiment 2

[0201] made figure 1 with Figure 4 device shown.

[0202] Specifically, a Ti film is formed on a substrate obtained by z-cutting MgO-doped lithium niobate crystals, and a grating pattern is fabricated in the y-axis direction by photolithography. Afterwards, using the Ti pattern as a mask, fluorine-based reactive ion etching was used to form a pattern with a pitch interval Λ of 214nm and a length L b 100μm grating groove. The groove depth of the grating is 40nm. In addition, in order to form an optical waveguide propagating in the y-axis, the grating portion was subjected to groove processing with a width Wm of 3 μm and a Tr of 0.5 μm using an excimer laser. Further, a sputtering device was used to form SiO 2 The buffer layer 17 is formed by using a black LN substrate as a support substrate, and the grating formation surface is bonded. The so-called black LN refers to lithium niobate in an oxygen-deficient state, which can suppress the generation of charge due to pyroele...

Embodiment 3

[0217] In the same way as in Example 2, a pitch interval Λ of 222 nm and a length L b 100μm grating groove. The groove depth of the grating is 40nm. Regarding the optical characteristics of the grating element, using a super light-emitting diode (SLD) as a broadband wavelength light source, the light is input to the grating element, and the output light is analyzed by a spectrum analyzer, thereby evaluating reflection characteristics from its transmission characteristics. As a result, for the TE mode, a central wavelength of 975nm, a maximum reflectance of 20%, and a full width at half maximum Δλ G 2nm characteristics.

[0218] Next, if figure 1 Install the laser module as shown. The light source element is an ordinary GaAs laser, and there is no AR coating on the exit end face.

[0219] Light source component specifications:

[0220] Center wavelength: 977nm

[0221] Output: 50mW

[0222] Half value width: 0.1nm

[0223] Laser element length: 250μm

[0224] Installati...

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Abstract

An external resonator type light emitting system includes a light source oscillating a semiconductor laser light by itself and a grating device providing an external resonator with the light soruce. The system performs osicllation in single mode. The light source includes an active layer oscillaing the semiconductor laser light. The grating device includes an optical waveguide having an incident face to which the semiconductor laser is incident and an emitting face of emitting an emitting light of a desired wavelength, a Bragg grating formed in the optical waveguide, and a propagating portion provided between the incident face and the Bragg grating. Formulas (1) to (5) are satisfied.

Description

technical field [0001] The present invention relates to an external resonator type light emitting device. Background technique [0002] A Fabry-Perot (FP) type laser is generally used as a semiconductor laser, and the Fabry-Perot (FP) type laser constitutes an optical resonator sandwiched between mirrors formed on both end surfaces of the active layer. However, since this FP-type laser oscillates at a wavelength at which the standing wave condition is satisfied, the longitudinal mode tends to become multi-mode. In particular, when the current or temperature changes, the oscillation wavelength changes, thereby changing the light intensity. [0003] Therefore, in order to realize optical communication, gas sensing, etc., a single-mode oscillation laser with high wavelength stability is required. Therefore, people have developed distributed feedback (DFB) lasers and distributed reflective (DBR) lasers. These lasers have diffraction gratings installed in semiconductors, and us...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01S5/14
CPCG02B6/124H01S5/0287H01S5/1039H01S5/141H01S5/2202H01S2301/163H01S5/02326H01S5/1021
Inventor 近藤顺悟山口省一郎吉野隆史武内幸久
Owner NGK INSULATORS LTD
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