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External-resonator-type light emitting device

A technology of external resonators and light-emitting devices, which is applied to the structure of optical resonant cavities, instruments, optics, etc., and can solve problems such as changes in light intensity

Active Publication Date: 2016-07-13
NGK INSULATORS LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, since this FP laser oscillates at the wavelength at which the standing wave condition is established, the longitudinal mode tends to become multi-mode. In particular, when the current or temperature changes, the oscillation wavelength changes, thereby changing the light intensity.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0174] made as Figure 1 ~ Figure 3 device shown.

[0175] Specifically, a Ti film is formed on a substrate obtained by z-cutting MgO-doped lithium niobate crystals, and a grating pattern is fabricated in the y-axis direction by photolithography. Afterwards, using the Ti pattern as a mask, fluorine-based reactive ion etching was used to form b100μm grating groove. The groove depth of the grating is 300nm. In addition, in order to form an optical waveguide propagating in the y-axis, the grating portion was subjected to groove processing with a width Wm of 3 μm and a Tr of 0.5 μm using an excimer laser. Further, a sputtering device was used to form SiO 2 The buffer layer 17 is constituted by using a black LN substrate as a support substrate and bonding the grating formation surface.

[0176] Next, the black LN substrate side was attached to a polishing table, and the rear surface of the LN substrate on which the grating was formed was precisely polished to a thickness (Ts) ...

Embodiment 2

[0201] made figure 1 and Figure 4 device shown.

[0202] Specifically, a Ti film is formed on a substrate obtained by z-cutting MgO-doped lithium niobate crystals, and a grating pattern is fabricated in the y-axis direction by photolithography. Afterwards, using the Ti pattern as a mask, fluorine-based reactive ion etching was used to form a pattern with a pitch interval Λ of 214nm and a length L b 100μm grating groove. The groove depth of the grating is 40nm. In addition, in order to form an optical waveguide propagating in the y-axis, the grating portion was subjected to groove processing with a width Wm of 3 μm and a Tr of 0.5 μm using an excimer laser. Further, a sputtering device was used to form SiO 2 The buffer layer 17 is formed by using a black LN substrate as a support substrate, and the grating formation surface is bonded. The so-called black LN refers to lithium niobate in an oxygen-deficient state, which can suppress the generation of charge due to pyroelec...

Embodiment 3

[0217] In the same way as in Example 2, a pitch interval Λ of 222 nm and a length L b 100μm grating groove. The groove depth of the grating is 40nm. Regarding the optical characteristics of the grating element, using a super light-emitting diode (SLD) as a broadband wavelength light source, the light is input to the grating element, and the output light is analyzed by a spectrum analyzer to evaluate reflection characteristics from its transmission characteristics. As a result, for the TE mode, a central wavelength of 975nm, a maximum reflectance of 20%, and a full width at half maximum Δλ G 2nm characteristics.

[0218] Next, if figure 1 Install the laser module as shown. The light source element is an ordinary GaAs laser, and there is no AR coating on the exit end face.

[0219] Light source component specifications:

[0220] Center wavelength: 977nm

[0221] Output: 50mW

[0222] Half value width: 0.1nm

[0223] Laser element length: 250μm

[0224] Installation speci...

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Abstract

The invention aims to suppress mode hopping, increase wavelength stability, and suppress beam power fluctuations without the use of a Peltier element. An external-resonator-type light emitting device equipped with: a light source that independently oscillates a semiconductor laser beam; and a grating element that comprises the light source and an external resonator and oscillates in single mode. The light source includes an active layer that oscillates the semiconductor laser beam. The grating element includes: an optical waveguide containing an irradiation surface onto which a semiconductor laser beam is irradiated, and an emission surface that emits emission light of a desired wavelength; a Bragg grating formed inside the optical waveguide; and a propagating unit arranged between the irradiation surface and the Bragg grating. The relationship of formulae (1)-(5) is satisfied.

Description

technical field [0001] The present invention relates to an external resonator type light emitting device. Background technique [0002] A Fabry-Perot (FP) type laser is generally used as a semiconductor laser, and the Fabry-Perot (FP) type laser constitutes an optical resonator sandwiched between mirrors formed on both end surfaces of the active layer. However, since this FP-type laser oscillates at a wavelength at which the standing wave condition is satisfied, the longitudinal mode tends to become multi-mode. In particular, when the current or temperature changes, the oscillation wavelength changes, thereby changing the light intensity. [0003] Therefore, in order to realize optical communication, gas sensing, etc., a single-mode oscillation laser with high wavelength stability is required. Therefore, people have developed distributed feedback (DFB) lasers and distributed reflective (DBR) lasers. These lasers have diffraction gratings installed in semiconductors, and us...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/14
CPCG02B6/124H01S5/0287H01S5/1039H01S5/141H01S5/2202H01S2301/163H01S5/02326H01S5/1021
Inventor 近藤顺悟山口省一郎吉野隆史武内幸久
Owner NGK INSULATORS LTD
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