Light emitting diode and manufacturing method therefor

Abstract

The invention discloses a light emitting diode and a manufacturing method therefor. The light emitting diode comprises a light emitting epitaxial laminated layer, an ohmic contact layer, an extending electrode, a transparent insulating layer, and a bonding wire electrode, wherein the upper surface of the light emitting epitaxial laminated layer is divided into an ohmic contact region and a non-ohmic contact region; the ohmic contact layer is positioned on the ohmic contact region of the light emitting epitaxial laminated layer; the extending electrode is formed on the ohmic contact layer, and at least partially extends towards the edge of the ohmic contact layer until reaches the non-ohmic contact region of the light emitting epitaxial laminated layer to be in contact with the upper surface of the light emitting epitaxial laminated layer; the extending electrode and the upper surfaces of the exposed ohmic contact layer and the light emitting epitaxial laminated layer are covered with the transparent insulating layer; a current channel is formed in the transparent insulating layer, and is connected with the extending electrode; the projection in the light emitting epitaxial laminated layer is positioned in the non-ohmic contact region; the bonding wire electrode is positioned on the transparent insulating layer and conducted with the extending electrode through the current channel; the projection in the light emitting epitaxial laminated layer is positioned in the non-ohmic contact region; when current is injected, the current rapidly flows towards the ohmic contact region of the light emitting epitaxial laminated layer along the current channel below the bonding wire electrode, so as to prevent the active layer below the bonding wire electrode from being injected with current to cause light emitting.

Description

technical field [0001] The invention relates to the field of semiconductor lighting, in particular to a light emitting diode and a manufacturing method thereof. Background technique [0002] In recent years, light emitting diodes (light emitting diodes, referred to as LEDs) have been widely used and play an increasingly important role in various display systems, lighting systems, automobile taillights and other fields. [0003] figure 1 It shows an existing light-emitting diode structure with high-power P-side light output, which uses a metal bonding layer 110 to bond a light-emitting epitaxial stack 150 to a conductive substrate 100, and forms an ohmic contact on the upper surface of the light-emitting epitaxial stack 150 layer 160 , and form a first wire electrode 171 and a second wire electrode 172 on the ohmic contact layer 160 . Although this structure can meet the high power demand, it is wasteful itself. Please see figure 2 , in this design, the second wire elect...

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Problems solved by technology

Although this structure can meet the high power demand, it itself wastes a lot

Please see figure 2 , in this design, the second wire electrode (wire electrode) is relatively large. After the current is turned on, the current is poured into the active layer below the first wire electrode in a large proportion and emits light compositely. Most of the emitted light is absorbed by the first wire electrode. The welding wire electrode itself is absorbed or blocked, and cannot be emitted from the epitaxial surface. The current is seriously wasted, and the light emitted from the light-emitting area to the second welding wire electrode is also absorbed and blocked, which seriously affects the LED light extraction rate.

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