Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A method for silicon powder doping

A technology of silicon powder and phosphorus powder, which is applied in the field of new energy nano-material preparation, can solve the problem of low conductivity of silicon materials, and achieve the effect of low conductivity and precise control of conductivity

Active Publication Date: 2019-12-20
江西硅瀛新能源科技有限公司
View PDF7 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to address the deficiencies of the prior art and provide a method for doping silicon powder. The method is simple in process and can be produced at low cost and on a large scale, and can fundamentally solve the problem of low conductivity of silicon materials.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] A silicon powder doping method described in this embodiment specifically includes the following steps.

[0023] (1) Use acetone, hydrofluoric acid, and ultrapure water to clean and dry the n-type silicon powder raw material with a conductivity of 1S / cm in sequence.

[0024] (2) Then place the cleaned silicon powder and phosphorus powder in a tube furnace for zone heating, using argon as a protective atmosphere, the temperature at the silicon powder is 800°C, the temperature at the phosphorus powder is 300°C, and the heat treatment time is 30min .

[0025] (3) Finally, the heat-treated silicon powder is cleaned and dried with hydrofluoric acid and ultrapure water in sequence.

[0026] Using this method can obtain a conductivity of 8×10 3 S / cm n-type silicon powder.

Embodiment 2

[0028] A silicon powder doping method described in this embodiment specifically includes the following steps.

[0029] (1) Use acetone, hydrofluoric acid, and ultrapure water to clean and dry the p-type silicon powder raw material with a conductivity of 1S / cm in sequence.

[0030] (2) Then put the cleaned silicon powder and phosphorus powder in a tube furnace for zone heating, using argon as the protective atmosphere, the temperature at the silicon powder is 820°C, the temperature at the phosphorus powder is 300°C, and the heat treatment time is 30min .

[0031] (3) Finally, the heat-treated silicon powder is cleaned and dried with hydrofluoric acid and ultrapure water in sequence.

[0032] Using this method can obtain a conductivity of 4×10 3 S / cm n-type silicon powder.

Embodiment 3

[0034] A silicon powder doping method described in this embodiment specifically includes the following steps.

[0035] (1) Use acetone, hydrofluoric acid, and ultrapure water to clean and dry the n-type silicon powder raw material with a conductivity of 1S / cm in sequence.

[0036] (2) Then mix the cleaned silicon powder and phosphorus powder and place them in a tube furnace for heating, using argon as the protective atmosphere, the treatment temperature is 760°C, and the heat treatment time is 60 minutes.

[0037] (3) Finally, the heat-treated silicon powder is cleaned and dried with hydrofluoric acid and ultrapure water in sequence.

[0038] Using this method can obtain a conductivity of 2×10 3 S / cm n-type silicon powder.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
electrical conductivityaaaaaaaaaa
electrical conductivityaaaaaaaaaa
electrical conductivityaaaaaaaaaa
Login to View More

Abstract

The invention discloses a silicon powder doping method. The silicon powder doping method comprises the following steps: cleaning silicon powder raw materials by adopting acetone, hydrofluoric acid and ultrapure water in sequence; putting the cleaned silicon powder and phosphorus powder in protective atmosphere, carrying out heat treatment, and gasifying the phosphorus powder so as to dope the silicon powder under the phosphorus atmosphere, thus achieving the purpose of improving the electric conductivity of the silicon powder. According to the silicon powder doping method, the process is simple, the cost is low, the electric conductivity of the silicon powder is controllable, and the silicon powder doping method is very suitable for large-scale industrialized production and is expected to be well applied in the fields such as lithium ion batteries, photoelectric materials and sensors.

Description

technical field [0001] The invention belongs to the technical field of new energy nano material preparation. Background technique [0002] As we all know, lithium-ion batteries have been widely used due to their excellent characteristics such as high energy density, high power density, good cycle performance, environmental friendliness, and structural diversity. In terms of the development needs of lithium-ion power batteries, the negative electrode materials are required to have the characteristics of high capacity and fast charging and discharging. The theoretical capacity of existing graphite anode materials is 372mAh / g, among which commercial graphite anode products have reached about 350mAh / g, and there is basically no room for improvement. The theoretical capacity of silicon as the anode material of lithium-ion batteries can reach about 4200mAh / g, and the content of silicon in the earth's crust is abundant, second only to oxygen, so it has become a research hotspot. ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01M4/38H01M4/62H01M10/0525
CPCH01M4/386H01M4/624H01M10/0525Y02E60/10
Inventor 岳之浩周浪黄海宾汤昊尹传强高超
Owner 江西硅瀛新能源科技有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com