Mos transistor turn-on voltage test system and test method
A MOS transistor and turn-on voltage technology, which is applied in the field of MOS transistor turn-on voltage test system, can solve the problems of time-consuming and low accuracy of turn-on voltage test results, etc.
Active Publication Date: 2019-04-19
SEMICON MFG INT (SHANGHAI) CORP
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[0005] The object of the present invention is to provide a turn-on voltage test system and test method of a MOS transistor, to solve the need for the test result of the turn-on voltage obtained by using the turn-on voltage test system of the prior art is not high and to determine the turn-on voltage time-consuming problem
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[0025] The turn-on voltage test system and test method of the MOS transistor proposed by the present invention will be further described in detail below with reference to the drawings and specific embodiments. Advantages and features of the present invention will be apparent from the following description and claims. It should be noted that all the drawings are in a very simplified form and use imprecise scales, and are only used to facilitate and clearly assist the purpose of illustrating the embodiments of the present invention.
[0026] Please refer to figure 2 , which is a schematic diagram of a turn-on voltage test system of a MOS transistor in an embodiment of the present invention, such as figure 2 As shown, the turn-on voltage test system of the MOS transistor includes: two source measure units (SMU) 15, an operational amplifier and a DC current source; two source measure units 15 are respectively connected to the drain 11 of the MOS transistor It is connected with...
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The invention provides a starting voltage testing system and testing method for an MOS transistor. Two source measuring units are connected with a drain electrode and a substrate of an MOS transistor respectively; an output terminal of an operational amplifier is connected with a gate of the MOS transistor; and a negative input terminal of the operational amplifier and a negative electrode of a direct current source are connected with a source electrode of the MOS transistor to form a starting voltage testing system. When starting voltage testing is carried out on the MOS transistor, a 0-V voltage is inputted into a positive input terminal of the operational amplifier; a current equal to a target current is provided for the source electrode of the MOS transistor by the direct current source; the source measuring units input set voltages to the drain electrode of the MOS transistor and then the voltage between the output terminal of the operation amplifier and the gate of the MOS transistor is measured simultaneously to obtain a starting voltage of the MOS transistor. The measuring process can be operated simply; the measurement precision is improved; and the time spent for a process of determining a starting voltage for testing is shortened.
Description
technical field [0001] The invention relates to the technical field of semiconductor testing, in particular to a test system and a test method for a turn-on voltage of a MOS transistor. Background technique [0002] To determine the turn-on voltage of the fabricated MOS transistor (MOSFET), a test needs to be carried out so as to accurately grasp the turn-on voltage of the MOS transistor. Please refer to figure 1 , which is a schematic diagram of an existing MOS transistor turn-on voltage testing system. Such as figure 1 As shown, the drain 11', the gate 12', the source 13' and the substrate 14' of the MOS transistor are sequentially connected with the first source measure unit SMU1, the second source measure unit SMU2, the third source measure unit SMU3 and the first source measure unit SMU3. Four source measure units SMU4 are connected, and the first source measure unit SMU1, the second source measure unit SMU2, the third source measure unit SMU3 and the fourth source m...
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IPC IPC(8): G01R31/26
Inventor 牛刚
Owner SEMICON MFG INT (SHANGHAI) CORP