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Method of Forming Transistors

A technology for transistors and insulators, used in the field of forming transistors

Active Publication Date: 2019-12-20
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, device speed is a challenge because of material constraints

Method used

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  • Method of Forming Transistors
  • Method of Forming Transistors
  • Method of Forming Transistors

Examples

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Embodiment Construction

[0038] The following disclosure provides many different embodiments or examples for implementing different features of the presented subject matter. Specific examples of components and arrangements are described below to simplify the present disclosure. Of course, these are examples only and are not intended to limit the invention. For example, in the following description, forming a first component over or on a second component may include an embodiment in which the first component and the second component are formed in direct contact, and may also include an embodiment in which a first component may be formed between the first component and the second component. Additional components such that the first and second components may not be in direct contact. In addition, the present invention may repeat reference numerals and / or characters in various instances. This repetition is for the sake of simplicity and clarity and does not in itself indicate a relationship between the ...

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Abstract

According to another embodiment, a method of forming a transistor is provided. The method includes the following operations: providing a substrate; providing a source over the substrate; providing a channel connected to the source; providing a drain connected to the channel; providing a gate insulator adjacent to the channel; providing a first interlayer dielectric between the source and the gate; and providing a second interlayer dielectric between the drain and the gate, wherein at least one of the formed source, drain and channel Sn is included at about 20% to 95% atomic percent. The present invention relates to methods of forming transistors.

Description

technical field [0001] The present invention relates to methods of forming transistors. Background technique [0002] Semiconductor devices such as gate-all-around (GAA) transistors are an emerging field of research in the semiconductor industry. However, device speed is a challenge because of material constraints. Therefore, there is a need to improve the above deficiencies. Contents of the invention [0003] In order to solve the problems existing in the prior art, according to one aspect of the present invention, a transistor is provided, including: a source; a drain; and a channel located between the source and the drain, wherein, At least one of the source, the drain and the channel contains about 20% to 95 atomic % of Sn. [0004] In the above-mentioned transistor, the source, the drain, and the channel are made of GeSn and contain about 20% to 90 atomic % of Sn. [0005] In the above transistor, the source, the drain, and the channel are made of SiSn. [0006] ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/775H01L29/165H01L21/335B82Y10/00
CPCB82Y10/00H01L29/66439H01L29/775H01L29/0676H01L29/068H01L21/02381H01L21/0245H01L21/02532H01L29/42392H01L29/78642H01L29/78684H01L29/78696H01L29/1033H01L29/0847H01L29/78681H01L29/66742H01L21/02452H01L21/02535H01L29/7849H01L21/823487H01L21/823885
Inventor 让-皮埃尔·科林格卡洛斯·H.·迪亚兹
Owner TAIWAN SEMICON MFG CO LTD