Method for preparing LED chips with positive, inverted and inverted trapezoidal mesa substrates by stealth dicing
A technology of LED chips and stealth cutting, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of limited light extraction efficiency and complex process, and achieve a simple and stable process that promotes escape probability and short preparation time. Effect
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[0040] see Figure 4 to Figure 7 , the present invention provides a method for stealth cutting and preparing an LED chip of an inverted trapezoidal mesa substrate, comprising the following steps:
[0041] 1) Provide a substrate 12, grow an epitaxial layer 11 on the front side of the substrate 12, the material of the epitaxial layer 11 is a GaN-based III-V group material, and the thickness of the epitaxial layer 11 is 2-20 μm, The material of the substrate 12 is sapphire, silicon carbide, gallium nitride, aluminum nitride, gallium oxide or glass.
[0042] 2) On the epitaxial layer 11, processes such as photolithography, etching, metal evaporation and passivation are used to form a plurality of LED units 13; in order to improve the quality and yield of subsequent splits, the LED units 13 can be used together on the track Laser scribing and / or etching creates the grooves.
[0043]3) Thinning and polishing the substrate 12, adhering the backside up on the blue film, and placing ...
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