Heat treatment device temperature control device and method based on real-time system

Abstract

The present invention provides a heat treatment device temperature control device and method based on a real-time system. The device comprises a heater, an electric power supply unit supplying power to the heater, a temperature measurement unit measuring the temperature of a reaction cavity, a signal processing unit, a power control unit included in the electric power supply unit, a special temperature controller and a technology module controller. Prior to carrying out the technology, the module controller leads the configuration parameters and control parameters in a technology file and a system file into the temperature controller, when the special temperature controller starts, the signal quantity of the control instructions emitted by the technology module controller, and the temperature control operation of heater supplying power to the reaction cavity is executed in real time through controlling the configuration parameters and the control parameters and the heartbeat interaction thread with the same period between the technology module controller and the special temperature controller.

Description

technical field [0001] The invention relates to the technical field of integrated circuit manufacturing applications, in particular to a temperature control method for heat treatment equipment based on a real-time system. Background technique [0002] The heat treatment process generally involves placing the semiconductor wafer in heat treatment equipment, and heating the wafer through a heating device in the heat treatment equipment to perform processes such as oxidation, deposition, diffusion, and thermal annealing. At present, in the heat treatment process, vertical furnaces with a higher degree of automation and better process performance are generally used as heat treatment equipment. However, as the feature size of the process decreases, the quality and efficiency of the heat treatment process is increasingly dependent on the improvement of the performance and safety of the temperature control system. [0003] see figure 1 , figure 1 It is a schematic diagram of the...

AI Technical Summary

Problems solved by technology

[0005] In the semiconductor manufacturing process, the process quality improvement of heat treatment equipment usually requires precise control of the temperature of the silicon wafer surface temperature, and the existing commercial temperature controller usually uses the traditional single-point proportional-integral-derivative controller (PID) The control method cannot adjust the structure and PID parameters of the specific PID controller according to the control pair and the characteristics of the heater

That is, the general-purpose temperature controller is not specially set for the heat treatment process, its applicable function range is narrow, the cost is high and the scalability is poor, and it cannot be updated in time with the update of process requirements

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