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A spatial diffraction spectrum imaging device of a semiconductor laser array

A technology of laser array and diffraction spectroscopy, which is applied in the field of spectral imaging devices and can solve the problems of high requirements for testing technology

Active Publication Date: 2019-01-08
INST OF APPLIED ELECTRONICS CHINA ACAD OF ENG PHYSICS
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

At present, there are micro-photocurrent spectroscopy, photocurrent spectroscopy, and micro-curved Raman spectroscopy, etc., for the measurement of strain caused by packaging. The difficulty of these methods is that they require sophisticated and expensive measurement equipment, and they also have high requirements for testing technology.

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  • A spatial diffraction spectrum imaging device of a semiconductor laser array

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Embodiment Construction

[0017] In order to clearly illustrate the technical features of the solution, the solution will be described below through a specific implementation mode combined with the accompanying drawings.

[0018] Examples of this program are:

[0019] The semiconductor laser array light source includes 19-64 light-emitting points, the size of each light-emitting area is about 1 μm×100 μm, the distance between adjacent light-emitting areas is 150-500 μm, and the center wavelength is 800-1000 nm.

[0020] Select the first ball lens with a focal length of 300mm, place the semiconductor laser light source at the back focus, and press figure 1 As shown, the first slit diaphragm is placed at a distance of 5-20mm from the light source to block the laser beam in the fast axis direction to attenuate the laser intensity, and the second slit diaphragm is placed at a distance of 250-290mm from the light source to achieve attenuation. Small aberrations improve spatial resolution.

[0021] Such as...

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PUM

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Abstract

The invention provides a spatial diffraction spectral imaging device for a semiconductor laser array, comprising, according to the scheme, a laser, a first crevice diaphragm, a second crevice diaphragm, a first spherical lens, a second spherical lens, a beam splitter, a blazed grating, a detector and an absorption cell; a laser beam emitted by the laser passes sequentially through the two crevice diaphragms in a group and the spherical lens and enters the beam splitter, the laser beam projected through the beam splitter propagates along X axis to the blazed grating, and the laser beam reflected by the beam splitter propagates along Y axis to the absorption cell; the diffracted beam projected through the beam splitter returns to the beam splitter along an optical path, is reflected by the beam splitter, propagates along the Y axis through the second spherical lens and then propagates to the detector. Diffraction spectral spatial imaging is achieved herein for the semiconductor laser array; the optical path is shortened through 180-degree reflection of the diffracted beam and reflection by the beam splitter; the spatial diffraction spectral imaging device has the advantages that the imaging device has compact structure, and an imaging system is simple and easy to mount and adjust.

Description

technical field [0001] The invention relates to the application field of semiconductor laser technology, in particular to a spectral imaging device of a semiconductor laser array. Background technique [0002] Due to the advantages of high electro-optic conversion efficiency, good reliability, and miniaturization, semiconductor lasers are widely used in direct applications and laser pump sources, especially as pump sources for solid-state lasers and fiber lasers, which promotes the development of all-solid-state lasers. rapid development. High-beam quality, high-brightness, and high-power semiconductor laser pump sources are important basic conditions for fiber lasers and solid-state lasers to achieve high-power, high-efficiency output. [0003] As an important process of laser manufacturing, semiconductor laser chip packaging technology is an important limiting factor for the application of high-power semiconductor lasers. Its quality seriously affects the output character...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01J3/28
CPCG01J3/2823
Inventor 曹礼强雷军高松信武德勇
Owner INST OF APPLIED ELECTRONICS CHINA ACAD OF ENG PHYSICS