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A kind of preparation method of poss modified cdte quantum dot sensitized solar cell

A solar cell and quantum dot sensitization technology, which is applied in the field of solar cells, can solve the problems of no solar cell photosensitizer and less quantum dot surface modifiers, so as to improve photocurrent and photoelectric conversion efficiency, increase injection efficiency and collect Efficiency, increased stability effect

Inactive Publication Date: 2018-07-13
HEBEI UNIV OF TECH
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  • Application Information

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Problems solved by technology

At present, POSS, as a high-performance surface modifier, has been used to improve the stability of graphene nanosheets, Au (POSS-Au composite nanoparticles) and Pd nanoparticles, but as a surface modifier for quantum dots Research is still relatively small
There is no literature report on its use as a photosensitizer for solar cells

Method used

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  • A kind of preparation method of poss modified cdte quantum dot sensitized solar cell
  • A kind of preparation method of poss modified cdte quantum dot sensitized solar cell
  • A kind of preparation method of poss modified cdte quantum dot sensitized solar cell

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preparation example Construction

[0020] The invention provides a kind of preparation method of POSS modified CdTe quantum dot sensitized solar cell, it is characterized in that comprising the following steps:

[0021] (1) Preparation of CdTe quantum dots: Prepare CdTe quantum dots by condensing and refluxing the water phase method; dissolve NAC (N-acetyl-L-cysteine) in water, stir at room temperature until uniformly mixed; then add CdCl 2 solution, to obtain a Cd-containing 2+ precursor solution; after vigorous stirring, excess KBH was added 4 , followed by immediate dropwise addition of Na 2 TeO 3 Aqueous solution, stirred at room temperature until a transparent and uniform solution; then adjusted the pH of the solution to 9-11.5 with NaOH solution; then heated at 90-100°C to prepare CdTe quantum dots with different particle sizes, wherein the molar ratio of NAC / Cd 2+ / Te 2- =1.2:1:0.2; after purification, CdTe quantum dot powder is obtained;

[0022] (2) POSS modified CdTe quantum dots: use OA-POSS t...

Embodiment 1

[0026] (1) Preparation of CdTe quantum dots: Prepare CdTe quantum dots by condensing and refluxing the water phase method; dissolve NAC in water, stir at room temperature until uniformly mixed; then add CdCl 2 solution, to obtain a Cd-containing 2+ precursor solution; after vigorous stirring, excess KBH was added 4 , then add Na 2 TeO 3 Aqueous solution, stirred at room temperature until a transparent and uniform solution; then adjusted the pH value of the solution to 11; then heated at 100°C to prepare CdTe quantum dots with different particle sizes, wherein the molar ratio NAC / Cd 2+ / Te 2- =1.2:1:0.2; after purification, CdTe quantum dot powder is obtained;

[0027] (2) POSS modified CdTe quantum dots: use OA-POSS to modify CdTe quantum dots; dissolving the CdTe quantum dot powder obtained in step 1) into water to form a CdTe quantum dot solution, adding the coupling agent EDC to the CdTe quantum dot solution and stirring 30min, wherein the molar ratio CdTe:EDC=1:500; a...

Embodiment 2

[0038] (1) Preparation of CdTe quantum dots: Prepare CdTe quantum dots by condensing and refluxing the water phase method; dissolve NAC in water, stir at room temperature until uniformly mixed; then add CdCl 2 solution, to obtain a Cd-containing 2+ precursor solution; after vigorous stirring, excess KBH was added 4 , then add Na 2 TeO 3 Aqueous solution, stirred at room temperature until a transparent and uniform solution; then adjust the pH value of the solution to 10; then heated at 100 ° C to prepare CdTe quantum dots with different particle sizes, wherein the molar ratio NAC / Cd 2+ / Te 2- =1.2:1:0.2; after purification, CdTe quantum dot powder is obtained;

[0039] (2) POSS modified CdTe quantum dots: use OA-POSS to modify CdTe quantum dots; dissolving the CdTe quantum dot powder obtained in step 1) into water to form a CdTe quantum dot solution, adding the coupling agent EDC to the CdTe quantum dot solution and stirring 40min, wherein the molar ratio CdTe:EDC=1:200; t...

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Abstract

The invention discloses a preparation method of a POSS modified CdTe quantum dot sensitized solar cell. The method is to prepare CdTe quantum dot powder by condensing and refluxing in an aqueous phase method; then modify the surface of the CdTe quantum dot with POSS, and use the POSS-modified CdTe quantum dot as a photosensitizer to assemble a quantum dot-sensitized solar cell. This method is a simple and feasible preparation method for OA-POSS modified CdTe quantum dot sensitized solar cells, which solves the problems of poor stability of quantum dots and severe electron-hole recombination between the photoanode and the quantum dot interface. Modifying OA‑POSS on the surface of CdTe quantum dots can change the photoelectric characteristics of CdTe quantum dots, effectively passivate quantum dots, reduce the defects on the surface of quantum dots, increase the stability of quantum dots, and make electrons more effectively injected into TiO2, and then Improving the photoelectric conversion efficiency and stability of quantum dot-sensitized solar cells.

Description

technical field [0001] The invention belongs to the field of solar cells, in particular to a preparation method of POSS modified CdTe quantum dot sensitized solar cells. Background technique [0002] Solar energy has the characteristics of inexhaustible, green and clean, and it is an ideal new green energy to solve the energy and environmental problems faced by human beings. In the utilization of solar energy, solar cells have attracted much attention due to their advantages of safety, reliability, noiselessness, pollution-free, and energy available everywhere. Quantum dot sensitized solar cells are the third generation of new solar cells, known as the most potential solar cells for their theoretical conversion efficiency up to 66%. At the same time, quantum dot sensitized solar cells have unique multiple And the advantages of simple manufacturing process. Among them, quantum dots have many unique advantages as light harvesting agents. The particle size of quantum dots can...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01G9/20H01G9/042H01L51/42H01L51/44H01L51/46H01L51/48
CPCH01G9/20H01G9/2054H10K30/00H10K30/81Y02E10/549Y02E10/542
Inventor 范永哲杨华东赵雪马瑞娜杜安曹晓明
Owner HEBEI UNIV OF TECH
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